Isolation Trench Etch Process Using Pulsed RF Bias Power in HBr/CF4/O2 Plasma

Isolation Trench Etch Process Using Pulsed RF Bias Power in HBr/CF4/O2 Plasma

Abrupt changes in sidewall profile were induced in pulsed plasma etch process for high aspect ratio isolation trench structuring. Impacts of operational parameters when applying pulsed RF bias power were investigated. Silicon sidewall chipping problems were removed mainly by increasing bias power le...

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Hauptverfasser: Park, Inho, Kang, Yung Seung, Jeong, SangSup, Nam, Seok Woo
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Kang, Yung Seung
Jeong, SangSup
Nam, Seok Woo
description Abrupt changes in sidewall profile were induced in pulsed plasma etch process for high aspect ratio isolation trench structuring. Impacts of operational parameters when applying pulsed RF bias power were investigated. Silicon sidewall chipping problems were removed mainly by increasing bias power level and pulse frequency. The chemical sensitivity of O2 has shown decreased in extremely narrow trench spaces of high pattern density
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title Isolation Trench Etch Process Using Pulsed RF Bias Power in HBr/CF4/O2 Plasma
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