Biaxial and Uniaxial Compressive Stress Implemented in Ge(Sn) pMOSFET Channels by Advanced Reduced Pressure Chemical Vapor Deposition Developments
Three advanced architectures for ultimate progress in Ge p-Metal Oxide Semiconductor Field Effect Transistors are discussed in this paper. Different routes for stress implementations in Ge channels, either biaxial or uniaxial, are proposed by advanced selective Chemical Vapor Deposition techniques....
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| creator | Vincent, Benjamin Gencarelli, Federica Lin, Denis Nyns, Laura Richard, Olivier Bender, Hugo Douhard, Bastien Moussa, Alain Merckling, Clement Witters, Liesbeth Vandervorst, Wilfried Loo, Roger Caymax, Matty Heyns, Marc |
| description | Three advanced architectures for ultimate progress in Ge p-Metal Oxide Semiconductor Field Effect Transistors are discussed in this paper. Different routes for stress implementations in Ge channels, either biaxial or uniaxial, are proposed by advanced selective Chemical Vapor Deposition techniques. Selective SiGe Strained Relaxed Buffer growth in Shallow Trench Isolation is first discussed to implement biaxial compressive strained Ge Quantum Wells on top of it. Next, innovative GeSn chemical vapor deposition technique is described in order to build either uniaxial strained Ge channel with GeSn Source/Drain stressors or compressively biaxial strained GeSn Quantum Well channels on Ge buffer layers. |
| doi_str_mv | 10.1149/1.3633304 |
| format | Conference Proceeding |
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| identifier | ISSN: 1938-5862 |
| ispartof | ECS transactions, 2011, Vol.41 (7), p.239-248 |
| issn | 1938-5862 1938-6737 |
| language | eng |
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| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| title | Biaxial and Uniaxial Compressive Stress Implemented in Ge(Sn) pMOSFET Channels by Advanced Reduced Pressure Chemical Vapor Deposition Developments |
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