Deposition Mechanism and Electrical Property of CeO 2 Thin Films by MOCVD with H 2 O Introduction
Cerium dioxide (CeO 2 ) thin films are prepared by means of the metal organic chemical vapor deposition (MOCVD) using tetrakis (3-methyl-3-pentoxy) cerium with and without H 2 O vapor introduction. A large amount of H 2 O (more than 2 sccm) acts as an oxidant and as a result the deposition rate incr...
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| Veröffentlicht in: | ECS transactions 2011-10, Vol.41 (3), p.193-199 |
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| container_title | ECS transactions |
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| creator | Tada, Naohiro Izu, Takanori Kitaru, Tomoya Shimada, Hiroki Suzuki, Setsu Ishibashi, Keiji Yamamoto, Yasuhiro |
| description | Cerium dioxide (CeO
2
) thin films are prepared by means of the metal organic chemical vapor deposition (MOCVD) using tetrakis (3-methyl-3-pentoxy) cerium with and without H
2
O vapor introduction. A large amount of H
2
O (more than 2 sccm) acts as an oxidant and as a result the deposition rate increases by up to four times at the deposition pressure of 2.0 Pa, leading to the temperature independence of the deposition rate. At the low deposition temperature of 270 åC, a small amount of H
2
O (0.1-0.2 sccm) suppresses the deposition because of its preferential occupation of the surface sites. The CeO
2
film annealed at 600 åC in the oxidizing ambient shows steep C-V characteristics with no flat band voltage shift nor hysteresis. |
| doi_str_mv | 10.1149/1.3633036 |
| format | Article |
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2
) thin films are prepared by means of the metal organic chemical vapor deposition (MOCVD) using tetrakis (3-methyl-3-pentoxy) cerium with and without H
2
O vapor introduction. A large amount of H
2
O (more than 2 sccm) acts as an oxidant and as a result the deposition rate increases by up to four times at the deposition pressure of 2.0 Pa, leading to the temperature independence of the deposition rate. At the low deposition temperature of 270 åC, a small amount of H
2
O (0.1-0.2 sccm) suppresses the deposition because of its preferential occupation of the surface sites. The CeO
2
film annealed at 600 åC in the oxidizing ambient shows steep C-V characteristics with no flat band voltage shift nor hysteresis.</description><identifier>ISSN: 1938-5862</identifier><identifier>EISSN: 1938-6737</identifier><identifier>DOI: 10.1149/1.3633036</identifier><language>eng</language><ispartof>ECS transactions, 2011-10, Vol.41 (3), p.193-199</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Tada, Naohiro</creatorcontrib><creatorcontrib>Izu, Takanori</creatorcontrib><creatorcontrib>Kitaru, Tomoya</creatorcontrib><creatorcontrib>Shimada, Hiroki</creatorcontrib><creatorcontrib>Suzuki, Setsu</creatorcontrib><creatorcontrib>Ishibashi, Keiji</creatorcontrib><creatorcontrib>Yamamoto, Yasuhiro</creatorcontrib><title>Deposition Mechanism and Electrical Property of CeO 2 Thin Films by MOCVD with H 2 O Introduction</title><title>ECS transactions</title><description>Cerium dioxide (CeO
2
) thin films are prepared by means of the metal organic chemical vapor deposition (MOCVD) using tetrakis (3-methyl-3-pentoxy) cerium with and without H
2
O vapor introduction. A large amount of H
2
O (more than 2 sccm) acts as an oxidant and as a result the deposition rate increases by up to four times at the deposition pressure of 2.0 Pa, leading to the temperature independence of the deposition rate. At the low deposition temperature of 270 åC, a small amount of H
2
O (0.1-0.2 sccm) suppresses the deposition because of its preferential occupation of the surface sites. The CeO
2
film annealed at 600 åC in the oxidizing ambient shows steep C-V characteristics with no flat band voltage shift nor hysteresis.</description><issn>1938-5862</issn><issn>1938-6737</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNqVj70KwjAYRYMo-Dv4Bt_qoCZG0zpXRYdSB3ENMU1ppE1KEpG-vQp9Aad74R4uHITmBK8I2e7XZEUZpZiyHhqRPY2XLKJRv-u7mG2GaOz9E2P2xaMREgfVWK-DtgZSJUthtK9BmByOlZLBaSkquDrbKBdasAUkKoMN3Ept4KSr2sOjhTRL7gd461DC-TtmcDHB2fwlf7dTNChE5dWsywlanI635LyUznrvVMEbp2vhWk4w_zlwwjsH-g_7AcZTSlo</recordid><startdate>20111004</startdate><enddate>20111004</enddate><creator>Tada, Naohiro</creator><creator>Izu, Takanori</creator><creator>Kitaru, Tomoya</creator><creator>Shimada, Hiroki</creator><creator>Suzuki, Setsu</creator><creator>Ishibashi, Keiji</creator><creator>Yamamoto, Yasuhiro</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20111004</creationdate><title>Deposition Mechanism and Electrical Property of CeO 2 Thin Films by MOCVD with H 2 O Introduction</title><author>Tada, Naohiro ; Izu, Takanori ; Kitaru, Tomoya ; Shimada, Hiroki ; Suzuki, Setsu ; Ishibashi, Keiji ; Yamamoto, Yasuhiro</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-crossref_primary_10_1149_1_36330363</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Tada, Naohiro</creatorcontrib><creatorcontrib>Izu, Takanori</creatorcontrib><creatorcontrib>Kitaru, Tomoya</creatorcontrib><creatorcontrib>Shimada, Hiroki</creatorcontrib><creatorcontrib>Suzuki, Setsu</creatorcontrib><creatorcontrib>Ishibashi, Keiji</creatorcontrib><creatorcontrib>Yamamoto, Yasuhiro</creatorcontrib><collection>CrossRef</collection><jtitle>ECS transactions</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tada, Naohiro</au><au>Izu, Takanori</au><au>Kitaru, Tomoya</au><au>Shimada, Hiroki</au><au>Suzuki, Setsu</au><au>Ishibashi, Keiji</au><au>Yamamoto, Yasuhiro</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Deposition Mechanism and Electrical Property of CeO 2 Thin Films by MOCVD with H 2 O Introduction</atitle><jtitle>ECS transactions</jtitle><date>2011-10-04</date><risdate>2011</risdate><volume>41</volume><issue>3</issue><spage>193</spage><epage>199</epage><pages>193-199</pages><issn>1938-5862</issn><eissn>1938-6737</eissn><abstract>Cerium dioxide (CeO
2
) thin films are prepared by means of the metal organic chemical vapor deposition (MOCVD) using tetrakis (3-methyl-3-pentoxy) cerium with and without H
2
O vapor introduction. A large amount of H
2
O (more than 2 sccm) acts as an oxidant and as a result the deposition rate increases by up to four times at the deposition pressure of 2.0 Pa, leading to the temperature independence of the deposition rate. At the low deposition temperature of 270 åC, a small amount of H
2
O (0.1-0.2 sccm) suppresses the deposition because of its preferential occupation of the surface sites. The CeO
2
film annealed at 600 åC in the oxidizing ambient shows steep C-V characteristics with no flat band voltage shift nor hysteresis.</abstract><doi>10.1149/1.3633036</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1938-5862 |
| ispartof | ECS transactions, 2011-10, Vol.41 (3), p.193-199 |
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| language | eng |
| recordid | cdi_crossref_primary_10_1149_1_3633036 |
| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| title | Deposition Mechanism and Electrical Property of CeO 2 Thin Films by MOCVD with H 2 O Introduction |
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