Evaluation of Properties of SiO 2 Films Fabricated by Plasma Oxidation

Evaluation of Properties of SiO 2 Films Fabricated by Plasma Oxidation

Properties of SiO2 films formed by plasma oxidation were compared with those of films formed by thermal oxidation. X-ray reflectivity (XRR) was used to evaluate the SiO2/Si interface roughness, thickness, and density of SiO2 films. Chemical properties of the SiO2 films were investigated by X-ray pho...

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Veröffentlicht in:ECS transactions 2011-10, Vol.41 (3), p.169-175
Hauptverfasser: Yamaguchi, Takuya, Nagata, Kohki, Ogura, Atsushi, Koganezawa, Tomoyuki, Hirosawa, Ichiro, Kabe, Yoshiro, Sato, Yoshihiro, Ishizuka, Shuuichi, Hirota, Yoshihiro
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container_issue 3
container_start_page 169
container_title ECS transactions
container_volume 41
creator Yamaguchi, Takuya
Nagata, Kohki
Ogura, Atsushi
Koganezawa, Tomoyuki
Hirosawa, Ichiro
Kabe, Yoshiro
Sato, Yoshihiro
Ishizuka, Shuuichi
Hirota, Yoshihiro
description Properties of SiO2 films formed by plasma oxidation were compared with those of films formed by thermal oxidation. X-ray reflectivity (XRR) was used to evaluate the SiO2/Si interface roughness, thickness, and density of SiO2 films. Chemical properties of the SiO2 films were investigated by X-ray photoelectron spectroscopy (XPS). Moreover, the relation between film density and its chemical properties was evaluated. This evaluation shows that SiO2 films fabricated by plasma oxidation have higher density and a smoother interface than those fabricated by thermal oxidation. In addition, oxidation rate was increased and interface quality and density were improved by incorporating hydrogen in the plasma atmosphere.
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title Evaluation of Properties of SiO 2 Films Fabricated by Plasma Oxidation
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