Evaluation of Al 2 O 3 Films for MANOS Memory Device with Oxygen Infusion by Gas Cluster Ion Beam

Properties of Al2O3 as blocking layer of MANOS memory device were investigated and effects of O infusion by GCIB process were discussed. By introduction of GCIB process, electrical properties were improved such as increasing of program window. GCIB process was able to modify film density and band-ga...

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Veröffentlicht in:	ECS transactions 2011-10, Vol.41 (3), p.109-114
Hauptverfasser:	Nagata, Kohki, Hashiguchi, Hiroki, Yamagichi, Takuya, Ogura, Atsushi, Oji, Hiroshi, Son, Jin-Young, Hirosawa, Ichiro, Tanaka, Yoshitsugu, Hirota, Yoshihiro, Gumpher, John, Yamashita, Koji
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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