Impacts of Metal Impurities on Recombination Properties at Small Angle Grain Boundaries in Multicrystalline Silicon for Solar Cells

The correlation between recombination properties and detailed misorientation angles at small angle grain boundaries SA-GBs in multicrystalline silicon (mc-Si) after metal contamination were evaluated. After metal contamination, EBIC contrast enhancements at > 1.5o SA-GBs were on the order of Fe/1...

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Bibliographische Detailangaben

Hauptverfasser:	Sameshima, Takashi, Tsuchiya, Yuki, Miyazaki, Naoto, Tachibana, Tomihisa, Ohshita, Yoshio, Arafune, Koji, Ogura, Atsushi
Format:	Tagungsbericht
Sprache:	eng
Online-Zugang:	Volltext
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