Industrial Technologies For III-Nitride-Based Electronics

The industrial level technologies including molecular beam epitaxy and submicron planar processing are developed to realize novel electron devices based on III-nitride multilayer heterostructures. Wide conditions range available on growth equipment used as well as flexible heterostructure designs al...

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Bibliographische Detailangaben

Hauptverfasser:	Krasovitsky, Dmitry, Alexeev, Alexey, Dudin, Anatoly, Kokin, Sergey, Katsavets, Nickolay, Chaly, Victor
Format:	Tagungsbericht
Sprache:	eng
Online-Zugang:	Volltext
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