Thick GaN Films Grown on Patterned Sapphire Substrates

GaN thick films, grown on specially patterned 2" sapphire substrates by HVPE methods have lower bowing and are less susceptible to fracture then ones, grown on unpatterned substrates under the same growth conditions. Numerical calculation shows good agreement with experiments. Such substrates c...

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Hauptverfasser:	Voronenkov, Vladislav, Gorbunov, Ruslan, Tsyuk, Alexander, Latyshev, Philippe, Lelikov, Yuriy, Rebane, Yuriy, Zubrilov, Andrey, Bochkareva, Natalia, Shreter, Yuriy
Format:	Tagungsbericht
Sprache:	eng
Online-Zugang:	Volltext
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