Thick GaN Films Grown on Patterned Sapphire Substrates
GaN thick films, grown on specially patterned 2" sapphire substrates by HVPE methods have lower bowing and are less susceptible to fracture then ones, grown on unpatterned substrates under the same growth conditions. Numerical calculation shows good agreement with experiments. Such substrates c...
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| container_volume | 35 |
| creator | Voronenkov, Vladislav Gorbunov, Ruslan Tsyuk, Alexander Latyshev, Philippe Lelikov, Yuriy Rebane, Yuriy Zubrilov, Andrey Bochkareva, Natalia Shreter, Yuriy |
| description | GaN thick films, grown on specially patterned 2" sapphire substrates by HVPE methods have lower bowing and are less susceptible to fracture then ones, grown on unpatterned substrates under the same growth conditions. Numerical calculation shows good agreement with experiments. Such substrates could be an alternative to expensive GaN wafers sliced from GaN boules. |
| doi_str_mv | 10.1149/1.3570850 |
| format | Conference Proceeding |
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| fulltext | fulltext |
| identifier | ISSN: 1938-5862 |
| ispartof | ECS transactions, 2011, Vol.35 (6), p.91-97 |
| issn | 1938-5862 1938-6737 |
| language | eng |
| recordid | cdi_crossref_primary_10_1149_1_3570850 |
| source | Institute of Physics Journals |
| title | Thick GaN Films Grown on Patterned Sapphire Substrates |
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