Fundamentals of III-V Semiconductor Electrochemistry and Wet Etching Processes: Br 2 Etching Properties onto InP

Etching mechanism, of HBr/Br2 solutions on InP, is studied using approaches as electrochemical characterization XPS analyses, Indium dosage by GF-AAS, SEM analysis of cross sectional shapes of etching features. As on GaAs we observed the characteristic opposition toward the dark reduction of Br2 for...

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Hauptverfasser:	Causier, Alexandre, Gérard, Isabelle, Bouttemy, Muriel, Tran-Van, Pierre, Etcheberry, Arnaud
Format:	Tagungsbericht
Sprache:	eng
Online-Zugang:	Volltext
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