Growth and Processing Defects in CMOS Homo- and Hetero-Epitaxy

Growth and Processing Defects in CMOS Homo- and Hetero-Epitaxy

The impact of different processing steps on the electrical properties of homo- and hetero-epitaxial junctions deposited on silicon substrates is described. In particular, the influence of the pre-epi in situ cleaning, using a high temperature bake in H2 is investigated. It is shown that the removal...

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Hauptverfasser: Simoen, Eddy, Bargallo Gonzalez, Mireia, Eneman, Geert, Rosseel, Eric, Hikavyy, Andriy Y., Kobayashi, D., Loo, Roger, Caymax, Matty, Claeys, Cor
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container_volume 34
creator Simoen, Eddy
Bargallo Gonzalez, Mireia
Eneman, Geert
Rosseel, Eric
Hikavyy, Andriy Y.
Kobayashi, D.
Loo, Roger
Caymax, Matty
Claeys, Cor
description The impact of different processing steps on the electrical properties of homo- and hetero-epitaxial junctions deposited on silicon substrates is described. In particular, the influence of the pre-epi in situ cleaning, using a high temperature bake in H2 is investigated. It is shown that the removal of oxygen and carbon from the starting surface is crucial in obtaining high-quality, low-leakage epitaxial junctions. In addition, it is demonstrated that post-epi implantation and anneal should be carefully optimized in order to maintain the strain in SiGe layers and to control the defect formation.
doi_str_mv 10.1149/1.3567670
format Conference Proceeding
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identifier ISSN: 1938-5862
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1938-6737
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source IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
title Growth and Processing Defects in CMOS Homo- and Hetero-Epitaxy
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