Advanced Direct-Polish Process on Organic Non-Porous Ultra Low-k Fluorocarbon Dielectric on Cu Interconnects

A direct-polish process has applied to the ultra low-k dielectric without the etch stop layer to reduce effective dielectric constant in damascene interconnects. In this study, the direct-polish process on organic non-porous dielectric, fluorocarbon (k=2.2), was demonstrated and an optimum direct-po...

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Bibliographische Detailangaben

Hauptverfasser:	Gu, Xun, Nemoto, Takenao, Tomita, Yugo, Duyos Mateo, Ricardo, Teramoto, Akinobu, Kuroki, Shin-Ichiro, Sugawa, Shigetoshi, Ohmi, Tadahiro
Format:	Tagungsbericht
Sprache:	eng
Online-Zugang:	Volltext
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