Effects of Quantum Confinement on Interdependence between DOS Spectrum and C(V) Characteristic of Si Nanowire-Based MOS Structure
Interrelation between capacitance - gate voltage [C(V)] characteristic and density-of-states (DOS) spectrum [N(E)] is analyzed using experimental C(V) data obtained from silicon-nanowire (SiNW) based metal-oxide-semiconductor (MOS) structure, solution of coupled Schrödinger-Poisson (SP) equations (w...
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