High K Metal Gate Aluminum CMP Challenges and Solutions

Because the gate height is critical to transistor performance, controlling gate height precisely and uniformly is the primary challenge for the replacement metal gate aluminum CMP process. A real-time profile control (RTPC) method was combined with a laser-based endpoint system to achieve within-waf...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Xu, Kun, Chen, Yufei, Iravani, Hassan, Wang, Yuchun, Swedek, Bogdan, Yu, May, Wang, You, Tu, Wen-chiang, Xia, Sherry, Karuppiah, Lakshmanan
Format: Tagungsbericht
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!