The L28 STI CMP Dummy Pattern Study on Topography for Advanced Fixed Abrasive and High Selective Slurry

The STI CMP performance was major determined by the uniformity of STI step height which was characterized by the ranges of within-die (WID) and within-wafer (WIW) thickness for both silicon nitride and trench oxide surface of isolation area. Currently, for 28nm generation, two advanced approaches fo...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Hsu, Chun-Wei, Huang, Po-Cheng, Lin, Jen-Chieh, Chen, Chia-Hsi, Chen, Y. M., Lin, Chih-Hsun, Hsu, Chia-Lin, Tsai, Teng-Chun, Wu, J. Y.
Format: Tagungsbericht
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 49
container_issue 10
container_start_page 43
container_title
container_volume 33
creator Hsu, Chun-Wei
Huang, Po-Cheng
Lin, Jen-Chieh
Chen, Chia-Hsi
Chen, Y. M.
Lin, Chih-Hsun
Hsu, Chia-Lin
Tsai, Teng-Chun
Wu, J. Y.
description The STI CMP performance was major determined by the uniformity of STI step height which was characterized by the ranges of within-die (WID) and within-wafer (WIW) thickness for both silicon nitride and trench oxide surface of isolation area. Currently, for 28nm generation, two advanced approaches for STI CMP were high selective slurry (HSS) and fixed abrasive (FA) CMP. For these two approaches, the design and layout of dummy were important to overcome the effect of various pattern densities and feature sizes. Therefore this research focused on the effect of dummy type for HSS and FA CMP. The result shows HSS CMP is the most robust process in STI CMP. The nitride thickness after HSS CMP shows good uniformity, 2~3 %, and is slightly affected by dummy type and PD of test key comparing with FA CMP.
doi_str_mv 10.1149/1.3489044
format Conference Proceeding
fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1149_1_3489044</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1149_1_3489044</sourcerecordid><originalsourceid>FETCH-LOGICAL-c189t-65a31714932fecb524078a8d9483b3ab02a0dc984cd1a47cb6b13743f0bd5bee3</originalsourceid><addsrcrecordid>eNotUM1Kw0AYXETBWj34Bt_VQ-pudpPdPZZqbSFiIfEcvv1JG2mTsEmLeXtb7GVmGIaBGUKeGZ0xJvQrm3GhNBXihkyY5ipKJZe3V52oNL4nD33_Q2l6jssJ2RY7D1msIC_WsPjcwNvxcBhhg8PgQwP5cHQjtA0UbdduA3a7Eao2wNydsLHewbL-PePcBOzrkwdsHKzq7Q5yv_d2uFj5_hjC-EjuKtz3_unKU_K9fC8Wqyj7-lgv5llkmdJDlCbImTwP4XHlrUliQaVC5bRQ3HA0NEbqrFbCOoZCWpMaxqXgFTUuMd7zKXn577Wh7fvgq7IL9QHDWDJaXh4qWXl9iP8BwoxXZw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>The L28 STI CMP Dummy Pattern Study on Topography for Advanced Fixed Abrasive and High Selective Slurry</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>Hsu, Chun-Wei ; Huang, Po-Cheng ; Lin, Jen-Chieh ; Chen, Chia-Hsi ; Chen, Y. M. ; Lin, Chih-Hsun ; Hsu, Chia-Lin ; Tsai, Teng-Chun ; Wu, J. Y.</creator><creatorcontrib>Hsu, Chun-Wei ; Huang, Po-Cheng ; Lin, Jen-Chieh ; Chen, Chia-Hsi ; Chen, Y. M. ; Lin, Chih-Hsun ; Hsu, Chia-Lin ; Tsai, Teng-Chun ; Wu, J. Y.</creatorcontrib><description>The STI CMP performance was major determined by the uniformity of STI step height which was characterized by the ranges of within-die (WID) and within-wafer (WIW) thickness for both silicon nitride and trench oxide surface of isolation area. Currently, for 28nm generation, two advanced approaches for STI CMP were high selective slurry (HSS) and fixed abrasive (FA) CMP. For these two approaches, the design and layout of dummy were important to overcome the effect of various pattern densities and feature sizes. Therefore this research focused on the effect of dummy type for HSS and FA CMP. The result shows HSS CMP is the most robust process in STI CMP. The nitride thickness after HSS CMP shows good uniformity, 2~3 %, and is slightly affected by dummy type and PD of test key comparing with FA CMP.</description><identifier>ISSN: 1938-5862</identifier><identifier>EISSN: 1938-6737</identifier><identifier>DOI: 10.1149/1.3489044</identifier><language>eng</language><ispartof>ECS transactions, 2010, Vol.33 (10), p.43-49</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Hsu, Chun-Wei</creatorcontrib><creatorcontrib>Huang, Po-Cheng</creatorcontrib><creatorcontrib>Lin, Jen-Chieh</creatorcontrib><creatorcontrib>Chen, Chia-Hsi</creatorcontrib><creatorcontrib>Chen, Y. M.</creatorcontrib><creatorcontrib>Lin, Chih-Hsun</creatorcontrib><creatorcontrib>Hsu, Chia-Lin</creatorcontrib><creatorcontrib>Tsai, Teng-Chun</creatorcontrib><creatorcontrib>Wu, J. Y.</creatorcontrib><title>The L28 STI CMP Dummy Pattern Study on Topography for Advanced Fixed Abrasive and High Selective Slurry</title><title>ECS transactions</title><description>The STI CMP performance was major determined by the uniformity of STI step height which was characterized by the ranges of within-die (WID) and within-wafer (WIW) thickness for both silicon nitride and trench oxide surface of isolation area. Currently, for 28nm generation, two advanced approaches for STI CMP were high selective slurry (HSS) and fixed abrasive (FA) CMP. For these two approaches, the design and layout of dummy were important to overcome the effect of various pattern densities and feature sizes. Therefore this research focused on the effect of dummy type for HSS and FA CMP. The result shows HSS CMP is the most robust process in STI CMP. The nitride thickness after HSS CMP shows good uniformity, 2~3 %, and is slightly affected by dummy type and PD of test key comparing with FA CMP.</description><issn>1938-5862</issn><issn>1938-6737</issn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2010</creationdate><recordtype>conference_proceeding</recordtype><recordid>eNotUM1Kw0AYXETBWj34Bt_VQ-pudpPdPZZqbSFiIfEcvv1JG2mTsEmLeXtb7GVmGIaBGUKeGZ0xJvQrm3GhNBXihkyY5ipKJZe3V52oNL4nD33_Q2l6jssJ2RY7D1msIC_WsPjcwNvxcBhhg8PgQwP5cHQjtA0UbdduA3a7Eao2wNydsLHewbL-PePcBOzrkwdsHKzq7Q5yv_d2uFj5_hjC-EjuKtz3_unKU_K9fC8Wqyj7-lgv5llkmdJDlCbImTwP4XHlrUliQaVC5bRQ3HA0NEbqrFbCOoZCWpMaxqXgFTUuMd7zKXn577Wh7fvgq7IL9QHDWDJaXh4qWXl9iP8BwoxXZw</recordid><startdate>20100101</startdate><enddate>20100101</enddate><creator>Hsu, Chun-Wei</creator><creator>Huang, Po-Cheng</creator><creator>Lin, Jen-Chieh</creator><creator>Chen, Chia-Hsi</creator><creator>Chen, Y. M.</creator><creator>Lin, Chih-Hsun</creator><creator>Hsu, Chia-Lin</creator><creator>Tsai, Teng-Chun</creator><creator>Wu, J. Y.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20100101</creationdate><title>The L28 STI CMP Dummy Pattern Study on Topography for Advanced Fixed Abrasive and High Selective Slurry</title><author>Hsu, Chun-Wei ; Huang, Po-Cheng ; Lin, Jen-Chieh ; Chen, Chia-Hsi ; Chen, Y. M. ; Lin, Chih-Hsun ; Hsu, Chia-Lin ; Tsai, Teng-Chun ; Wu, J. Y.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c189t-65a31714932fecb524078a8d9483b3ab02a0dc984cd1a47cb6b13743f0bd5bee3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2010</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Hsu, Chun-Wei</creatorcontrib><creatorcontrib>Huang, Po-Cheng</creatorcontrib><creatorcontrib>Lin, Jen-Chieh</creatorcontrib><creatorcontrib>Chen, Chia-Hsi</creatorcontrib><creatorcontrib>Chen, Y. M.</creatorcontrib><creatorcontrib>Lin, Chih-Hsun</creatorcontrib><creatorcontrib>Hsu, Chia-Lin</creatorcontrib><creatorcontrib>Tsai, Teng-Chun</creatorcontrib><creatorcontrib>Wu, J. Y.</creatorcontrib><collection>CrossRef</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hsu, Chun-Wei</au><au>Huang, Po-Cheng</au><au>Lin, Jen-Chieh</au><au>Chen, Chia-Hsi</au><au>Chen, Y. M.</au><au>Lin, Chih-Hsun</au><au>Hsu, Chia-Lin</au><au>Tsai, Teng-Chun</au><au>Wu, J. Y.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>The L28 STI CMP Dummy Pattern Study on Topography for Advanced Fixed Abrasive and High Selective Slurry</atitle><btitle>ECS transactions</btitle><date>2010-01-01</date><risdate>2010</risdate><volume>33</volume><issue>10</issue><spage>43</spage><epage>49</epage><pages>43-49</pages><issn>1938-5862</issn><eissn>1938-6737</eissn><abstract>The STI CMP performance was major determined by the uniformity of STI step height which was characterized by the ranges of within-die (WID) and within-wafer (WIW) thickness for both silicon nitride and trench oxide surface of isolation area. Currently, for 28nm generation, two advanced approaches for STI CMP were high selective slurry (HSS) and fixed abrasive (FA) CMP. For these two approaches, the design and layout of dummy were important to overcome the effect of various pattern densities and feature sizes. Therefore this research focused on the effect of dummy type for HSS and FA CMP. The result shows HSS CMP is the most robust process in STI CMP. The nitride thickness after HSS CMP shows good uniformity, 2~3 %, and is slightly affected by dummy type and PD of test key comparing with FA CMP.</abstract><doi>10.1149/1.3489044</doi><tpages>7</tpages></addata></record>
fulltext fulltext
identifier ISSN: 1938-5862
ispartof ECS transactions, 2010, Vol.33 (10), p.43-49
issn 1938-5862
1938-6737
language eng
recordid cdi_crossref_primary_10_1149_1_3489044
source IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
title The L28 STI CMP Dummy Pattern Study on Topography for Advanced Fixed Abrasive and High Selective Slurry
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-13T02%3A28%3A10IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=The%20L28%20STI%20CMP%20Dummy%20Pattern%20Study%20on%20Topography%20for%20Advanced%20Fixed%20Abrasive%20and%20High%20Selective%20Slurry&rft.btitle=ECS%20transactions&rft.au=Hsu,%20Chun-Wei&rft.date=2010-01-01&rft.volume=33&rft.issue=10&rft.spage=43&rft.epage=49&rft.pages=43-49&rft.issn=1938-5862&rft.eissn=1938-6737&rft_id=info:doi/10.1149/1.3489044&rft_dat=%3Ccrossref%3E10_1149_1_3489044%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true