Epitaxial Growth on High Aspect Ratio Structures

A continuous scaling of transistor devices is carried out by not only increasing the drive current but also reducing the off-state leakage current. For short channel devices, the reduction of leakage current is increasingly difficult and hence the use of multi-gate devices is looking increasingly mo...

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Bibliographische Detailangaben

Hauptverfasser:	Chopra, Saurabh, Tran, Vinh, Wood, Bingxi, Kim, Yihwan, Kuppurao, Satheesh
Format:	Tagungsbericht
Sprache:	eng
Online-Zugang:	Volltext
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