Evaluation of Narrow Gap Filling Ability in Shallow Trench Isolation by Organosiloxane Sol-Gel Precursor

High quality SiO2 film formation in the narrow trench pattern is important for many applications such as large scale integration (LSI) circuit and micro electro mechanical system (MEMS) industry. We have evaluated the process conditions, electrical properties, structural characteristics, and gap fil...

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Bibliographische Detailangaben

Hauptverfasser:	Watanuki, Kohei, Inokuchi, Atsutoshi, Banba, Akinori, Manabe, Nobuyuki, Suzuki, Hirokazu, Koike, Tadashi, Adachi, Tastuhiko, Goto, Tetsuya, Teramoto, Akinobu, Shirai, Yasuyuki, Sugawa, Shigetoshi, Ohmi, Tadahiro
Format:	Tagungsbericht
Sprache:	eng
Online-Zugang:	Volltext
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