(Invited) Scaling FETs to 10 nm: Coulomb Effects, Source Starvation, and Virtual Source

In our attempts to scale FETs to the 10 nm length, alternatives to conventional Si CMOS are sought on the grounds that: 1. Si seems to have reached its technological and performance limits and 2. The use of alternative high-mobility channel materials will provide the missing performance. With the he...

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Hauptverfasser:	Fischetti, Massimo V., Jin, Seonghoon, Tang, Ting-wei, Asbeck, Peter, Taur, Yuan, Laux, Steven, Sano, Nobuyuki, Rodwell, Mark
Format:	Tagungsbericht
Sprache:	eng
Online-Zugang:	Volltext
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