UV Photodetectors with Lateral Self-assembled ZnO Nanowires Grown at Low Temperature
In this paper, a self-assembled lateral growth of ZnO nanowire (NW) photodetector has been successfully synthesized by an aqueous solution method at low temperature (85oC). The growth of ZnO NWs on a silicon substrate with a ZnO seeding layer exhibits single-phase wurtzite ZnO crystal structure, and...
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| creator | Yang, Po-Yu Lee, I-Che Chang, Chia-Tsung Lin, Kao-Chao Wang, Jyh-Liang Cheng, Kuo-Jui Lin, Chun-Chuan Cheng, Huang-Chung |
| description | In this paper, a self-assembled lateral growth of ZnO nanowire (NW) photodetector has been successfully synthesized by an aqueous solution method at low temperature (85oC). The growth of ZnO NWs on a silicon substrate with a ZnO seeding layer exhibits single-phase wurtzite ZnO crystal structure, and grows along the c-axis direction. Furthermore, we have demonstrated the current-voltage characteristics and photoresponse of the ZnO NWs with and without UV (325 nm) illumination. Therefore, this low-temperature and simple fabrication process is a viable processing technique to selectively grow lateral ZnO NWs on a flat substrate of any material, with potential applications in flexible NW devices. |
| doi_str_mv | 10.1149/1.3237015 |
| format | Conference Proceeding |
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| identifier | ISSN: 1938-5862 |
| ispartof | ECS transactions, 2009, Vol.25 (10), p.91-98 |
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| language | eng |
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| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| title | UV Photodetectors with Lateral Self-assembled ZnO Nanowires Grown at Low Temperature |
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