Electroluminescence in Metal-Oxide-Semiconductor Tunneling Diodes with Ultra Thin Silicon

Electroluminescence characteristics of a metal-oxide-semiconductor tunneling diode on a silicon-on-insulator wafer have been studied. The spectrum from the diode is peaked at 1050 nm (1.18 eV) and at 1145 nm (1.08 eV). The spectrum from the diode on a silicon wafer is peaked at 1145 nm. The peak at...

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Hauptverfasser:	Matsumura, Kei, Yamada, Ryuta, Arima, Kenta, Uchikoshi, Junichi, Morita, Mizuho
Format:	Tagungsbericht
Sprache:	eng
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creator	Matsumura, Kei Yamada, Ryuta Arima, Kenta Uchikoshi, Junichi Morita, Mizuho
description	Electroluminescence characteristics of a metal-oxide-semiconductor tunneling diode on a silicon-on-insulator wafer have been studied. The spectrum from the diode is peaked at 1050 nm (1.18 eV) and at 1145 nm (1.08 eV). The spectrum from the diode on a silicon wafer is peaked at 1145 nm. The peak at 1145 nm can be assigned as phonon-assisted indirect transitions. It is indicated that the peak at 1050 nm is due to the quantum confinement in an ultra thin silicon layer.
doi_str_mv	10.1149/1.3236403
format	Conference Proceeding
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identifier	ISSN: 1938-5862
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source	IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
title	Electroluminescence in Metal-Oxide-Semiconductor Tunneling Diodes with Ultra Thin Silicon
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