Characterization of Phosphorous and Boron Doped Silicon Oxynitride Prepared by Plasma Enhanced Chemical Vapor Deposition

5% B2H6/Ar and 5% PH3/Ar were introduced to the plasma enhanced chemical vapor deposition process of silicon oxynitride. The bond configurations and refractive indexes of the boron/phosphorous (B/P) doped layers were characterized by Fourier transform infrared spectroscopy and the prism coupling met...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Sun, Fei, Sengo, Gabriël, Driessen, Alfred, Wörhoff, Kerstin
Format:	Tagungsbericht
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!