PEALD ZrO 2 Films Deposition on TiN and Si Substrates
The substrate influence on the structure of 60nm-thick ZrO2 films deposited by Plasma Enhanced Atomic Layer Deposition (PEALD) is reported. Films were grown either on TiN/Si(100) or on Si(100) substrates. TiN layers (45nm thick) were PVD-deposited. High Resolution Transmission Electron Microscopy (H...
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| Veröffentlicht in: | ECS transactions 2009-09, Vol.25 (8), p.235-241 |
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| creator | Monnier, Denis Gros-Jean, Mickael Deloffre, Emilie Doisneau, Béatrice Coindeau, Stéphane Crisci, Alexandre Roy, Jérôme Mi, Yanyu Detlefs, Blanka Zegenhagen, Jorg Wyon, Christophe Martinet, Christine Volpi, Fabien Blanquet, Elisabeth |
| description | The substrate influence on the structure of 60nm-thick ZrO2 films deposited by Plasma Enhanced Atomic Layer Deposition (PEALD) is reported. Films were grown either on TiN/Si(100) or on Si(100) substrates. TiN layers (45nm thick) were PVD-deposited. High Resolution Transmission Electron Microscopy (HRTEM) micrographs show that ZrO2 films display a microstructure made of columnar grains with a diameter of 15-20 nm and extended throughout the whole film thickness. An interfacial layer between ZrO2 films and TiN substrates was detected by Synchrotron Radiation X-Ray Photoelectron Spectroscopy and HRTEM. According to thermodynamics simulations, this interfacial layer should be a ternary Zr-Ti-O compound. |
| doi_str_mv | 10.1149/1.3207596 |
| format | Article |
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| ispartof | ECS transactions, 2009-09, Vol.25 (8), p.235-241 |
| issn | 1938-5862 1938-6737 |
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| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| title | PEALD ZrO 2 Films Deposition on TiN and Si Substrates |
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