Characterization of Stacked Hafnium Oxide (HfO 2 )/Silicon Dioxide (SiO 2 ) Metal-Oxide-Semiconductor (MOS) Tunneling Temperature Sensors

In this paper, the stacked HfO2/SiO2 MOS tunneling temperature sensors prepared by low temperature processing are investigated. The temperature responses of the stacked HfO2/SiO2 MOS tunneling temperature sensors at high and low temperature regions are not the same. The saturation current of the stacked HfO2/SiO2 MOS tunneling temperature sensor may affected by Frenkel-Poole effect at high temperature. It was also observed that the thicker stacked HfO2/SiO2 MOS tunneling temperature sensors are easier to be affected by Frenkel-Poole effect at high temperature. The stacked HfO2/SiO2 MOS tunneling temperature sensors can operate under low voltage and therefore consume less power as compared with the pure SiO2 tunneling temperature sensors.