Formation and Characterization of Thin Silicon Dioxide Films Obtained by Inductively-Coupled High-Density Plasmas using a Dual Rotated Spiral Antenna System

Formation and Characterization of Thin Silicon Dioxide Films Obtained by Inductively-Coupled High-Density Plasmas using a Dual Rotated Spiral Antenna System

Thin silicon dioxide films were obtained by low-temperature plasma oxidation. Plasma oxidation was performed using a specially-designed new plasma source, called dual rotated spiral antenna (DuRoSA) system. This new plasma source produced high density plasmas (~ 1012 cm-3) having relatively low elec...

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Hauptverfasser: Kim, Yil Wook, Woo, Sang Ho, Kim, Hai-Won, Um, Pyung Yong, Ji, Jung-Min, Kim, Chang-Koo
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Woo, Sang Ho
Kim, Hai-Won
Um, Pyung Yong
Ji, Jung-Min
Kim, Chang-Koo
description Thin silicon dioxide films were obtained by low-temperature plasma oxidation. Plasma oxidation was performed using a specially-designed new plasma source, called dual rotated spiral antenna (DuRoSA) system. This new plasma source produced high density plasmas (~ 1012 cm-3) having relatively low electron temperatures (2.5 ~ 4 eV). The temperature dependence of the plasma oxidation was found to be less sensitive than that of the high temperature thermal oxidation. The decrease in both oxidation rate and electron density with increasing oxygen fraction suggested that the negative oxygen ions may play the key role in plasma oxidation.
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identifier ISSN: 1938-5862
ispartof ECS transactions, 2009, Vol.25 (6), p.173-178
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title Formation and Characterization of Thin Silicon Dioxide Films Obtained by Inductively-Coupled High-Density Plasmas using a Dual Rotated Spiral Antenna System
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