Pt/Ge Schottky-Barrier Reduction by Rapid Thermal Diffusion of P Dopants

Pt/Ge Schottky-Barrier Reduction by Rapid Thermal Diffusion of P Dopants

Low platinum-germanide-Schottky barrier diodes are fabricated via the incorporation of dopants by diffusion. A phosphorous spin-on-dopant resist is used for the formation of a highly doped surface layer in a rapid thermal annealing process, prior to the formation of platinum-germanide Schottky barri...

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Hauptverfasser: Henkel, Christoph, Abermann, Stephan, Bethge, Ole, Bertagnolli, Emmerich
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Abermann, Stephan
Bethge, Ole
Bertagnolli, Emmerich
description Low platinum-germanide-Schottky barrier diodes are fabricated via the incorporation of dopants by diffusion. A phosphorous spin-on-dopant resist is used for the formation of a highly doped surface layer in a rapid thermal annealing process, prior to the formation of platinum-germanide Schottky barrier diodes. For rapid diffusion processes above 580 {degree sign}C ohmic contact behavior is found while evidence is given for a lowered effective Schottky-barrier height.
doi_str_mv 10.1149/1.3203974
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identifier ISSN: 1938-5862
ispartof ECS transactions, 2009, Vol.25 (7), p.377-384
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1938-6737
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source IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
title Pt/Ge Schottky-Barrier Reduction by Rapid Thermal Diffusion of P Dopants
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