Erratum: Mechanisms for Formation of a One-Dimensional Horizontal Anodic Aluminum Oxide Nanopore Array on a Si Substrate [J. Electrochem. Soc., 152, D227 (2005)]

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Veröffentlicht in:Journal of the Electrochemical Society 2009, Vol.156 (8), p.S9
Hauptverfasser: Chen, Zhi, Zhang, Hongguo
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container_end_page
container_issue 8
container_start_page S9
container_title Journal of the Electrochemical Society
container_volume 156
creator Chen, Zhi
Zhang, Hongguo
description
doi_str_mv 10.1149/1.3157231
format Article
fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1149_1_3157231</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1149_1_3157231</sourcerecordid><originalsourceid>FETCH-LOGICAL-c691-8f669044da313515811fed3a0c31d1572852b866f4b8cfe10939d7ff0fdd824d3</originalsourceid><addsrcrecordid>eNotkLtOwzAYhTOARCkMvME_UqkJ_uNc2aJeKKjQod0QilxfVKPEruxEorwNb0oQnc5lOEf6guAOSYSYlA8YUUzzmOJFMCIEaZhkKV4F195_DhGLJB8FPwvnWNe3j_Aq-YEZ7VsPyjpYWteyTlsDVgGDjZHhXLfS-KFiDays09_WdIOtjBWaQ9X0rTZ9C5svLSS8MWOP1kmohoMTDDsMthq2_d53w6OE95cIFo3knbP8INsItpZHU8A0nsI8jnO4jwlJJx83waVijZe3Zx0Hu-ViN1uF683T86xahzwrMSxUlpUkSQSjSFNMC0QlBWWEUxR_FIo03hdZppJ9wZVEUtJS5EoRJUQRJ4KOg8n_LHfWeydVfXS6Ze5UI6n_cNZYn3HSX-jwZxk</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Erratum: Mechanisms for Formation of a One-Dimensional Horizontal Anodic Aluminum Oxide Nanopore Array on a Si Substrate [J. Electrochem. Soc., 152, D227 (2005)]</title><source>IOP Publishing Journals</source><creator>Chen, Zhi ; Zhang, Hongguo</creator><creatorcontrib>Chen, Zhi ; Zhang, Hongguo</creatorcontrib><identifier>ISSN: 0013-4651</identifier><identifier>DOI: 10.1149/1.3157231</identifier><language>eng</language><ispartof>Journal of the Electrochemical Society, 2009, Vol.156 (8), p.S9</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,4010,27900,27901,27902</link.rule.ids></links><search><creatorcontrib>Chen, Zhi</creatorcontrib><creatorcontrib>Zhang, Hongguo</creatorcontrib><title>Erratum: Mechanisms for Formation of a One-Dimensional Horizontal Anodic Aluminum Oxide Nanopore Array on a Si Substrate [J. Electrochem. Soc., 152, D227 (2005)]</title><title>Journal of the Electrochemical Society</title><issn>0013-4651</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNotkLtOwzAYhTOARCkMvME_UqkJ_uNc2aJeKKjQod0QilxfVKPEruxEorwNb0oQnc5lOEf6guAOSYSYlA8YUUzzmOJFMCIEaZhkKV4F195_DhGLJB8FPwvnWNe3j_Aq-YEZ7VsPyjpYWteyTlsDVgGDjZHhXLfS-KFiDays09_WdIOtjBWaQ9X0rTZ9C5svLSS8MWOP1kmohoMTDDsMthq2_d53w6OE95cIFo3knbP8INsItpZHU8A0nsI8jnO4jwlJJx83waVijZe3Zx0Hu-ViN1uF683T86xahzwrMSxUlpUkSQSjSFNMC0QlBWWEUxR_FIo03hdZppJ9wZVEUtJS5EoRJUQRJ4KOg8n_LHfWeydVfXS6Ze5UI6n_cNZYn3HSX-jwZxk</recordid><startdate>2009</startdate><enddate>2009</enddate><creator>Chen, Zhi</creator><creator>Zhang, Hongguo</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>2009</creationdate><title>Erratum: Mechanisms for Formation of a One-Dimensional Horizontal Anodic Aluminum Oxide Nanopore Array on a Si Substrate [J. Electrochem. Soc., 152, D227 (2005)]</title><author>Chen, Zhi ; Zhang, Hongguo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c691-8f669044da313515811fed3a0c31d1572852b866f4b8cfe10939d7ff0fdd824d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chen, Zhi</creatorcontrib><creatorcontrib>Zhang, Hongguo</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of the Electrochemical Society</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Chen, Zhi</au><au>Zhang, Hongguo</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Erratum: Mechanisms for Formation of a One-Dimensional Horizontal Anodic Aluminum Oxide Nanopore Array on a Si Substrate [J. Electrochem. Soc., 152, D227 (2005)]</atitle><jtitle>Journal of the Electrochemical Society</jtitle><date>2009</date><risdate>2009</risdate><volume>156</volume><issue>8</issue><spage>S9</spage><pages>S9-</pages><issn>0013-4651</issn><doi>10.1149/1.3157231</doi><oa>free_for_read</oa></addata></record>
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title Erratum: Mechanisms for Formation of a One-Dimensional Horizontal Anodic Aluminum Oxide Nanopore Array on a Si Substrate [J. Electrochem. Soc., 152, D227 (2005)]
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-13T15%3A24%3A58IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Erratum:%20Mechanisms%20for%20Formation%20of%20a%20One-Dimensional%20Horizontal%20Anodic%20Aluminum%20Oxide%20Nanopore%20Array%20on%20a%20Si%20Substrate%20%5BJ.%20Electrochem.%20Soc.,%20152,%20D227%20(2005)%5D&rft.jtitle=Journal%20of%20the%20Electrochemical%20Society&rft.au=Chen,%20Zhi&rft.date=2009&rft.volume=156&rft.issue=8&rft.spage=S9&rft.pages=S9-&rft.issn=0013-4651&rft_id=info:doi/10.1149/1.3157231&rft_dat=%3Ccrossref%3E10_1149_1_3157231%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true