Boron Diffusion Behavior During the Formation of Shallow p+/n Junction Using the Combination of Ge Pre-amorphization Implantation, Pre-Annealing RTA and Post-Annealing Non-Melt Excimer Laser(NLA) Processes

In this paper, we studied the behavior of boron diffusion during the formation of shallow p+/n junction. The combination of Ge-PAI with low-energy boron implantation, pre-annealing RTA and post annealing NLA processes lead to the ultra-fast-diffusion of boron which increase the junction depth of the annealed samples.