Investigation on Chemical Mechanical Polishing of GeSbTe for High Density Phase Change Memory

Phase change memory (PCM) is considered to be a prospective candidate to replace flash for next generation non-volatile memory. In this paper, we studied GST chemical mechanical polishing (CMP) process characterization and optimization on 8-inch wafers. CMP experiment was performed on GST blanket an...

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Bibliographische Detailangaben

Hauptverfasser:	Zhong, Min, Song, Zhi-Tang, Liu, Bo, Feng, Song-lin, Xie, Zhi-Feng, Zhang, Fu-Xiong, Xiang, Yang-Hui
Format:	Tagungsbericht
Sprache:	eng
Online-Zugang:	Volltext
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