HF Vapor Release Assessment to Address NEMS Applications
Due to the devices downscaling, the HF vapor release process, one of the most effective techniques for MEMS release, becomes more challenging regarding stiction. An initial compatibility study shows that many metals are compatible excepted Ni and Cu. Then a design of experiment (DOE) was performed o...
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| creator | Lachal, Laurent Auclair, Sylvain Lavios, Pascal Finet, Jean-Marc Assidi, Roselyne Klein, Mouna Vaudaine, Marie-Hélène Delaguillaumie, Fanny Marcoux, Carine Andreucci, Philippe Grange, Hubert Berthelot, Audrey Garcia-Santana, Roland Lasbordes, Franck Lajoinie, Emile Louveau, Olivier Chiaroni, Julien |
| description | Due to the devices downscaling, the HF vapor release process, one of the most effective techniques for MEMS release, becomes more challenging regarding stiction. An initial compatibility study shows that many metals are compatible excepted Ni and Cu. Then a design of experiment (DOE) was performed on thermal oxide wafers to obtain the parameters for a free stiction process. Nevertheless, current MEMS release processes can not be used on NEMS structures due to more aggressive shape factor. The solution to adapt current HF vapor MEMS release process to NEMS consists in the reduction of the etchrate, reducing the water layer on the surface during the etch step and thereby stiction occurrence. For very challenging structures, reducing the etch rate is not sufficient to avoid stiction, heated processes have then to be used. |
| doi_str_mv | 10.1149/1.2992226 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1149_1_2992226</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1149_1_2992226</sourcerecordid><originalsourceid>FETCH-LOGICAL-c104t-8915f79d5fa654a08e5ba0ceeb85c447bf9cc40fbc15cf36a4c7a63567aa27c3</originalsourceid><addsrcrecordid>eNotj81Kw0AYRQdRsFYXvsFsXaTO_88ylNYWqoIWt8OXyQxE0ibMl41vb8Ws7r1wuHAIeeRsxbnyz3wlvBdCmCuy4F66ylhpr-eunRG35A7xmzFzwe2CuN2WfsE4FPqR-gSYaI2YEE_pPNFpoHXblsukb5vXT1qPY99FmLrhjPfkJkOP6WHOJTluN8f1rjq8v-zX9aGKnKmpcp7rbH2rMxitgLmkG2AxpcbpqJRtso9RsdxErmOWBlS0YKQ2FkDYKJfk6f82lgGxpBzG0p2g_ATOwp9x4GE2lr-fKUer</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>HF Vapor Release Assessment to Address NEMS Applications</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>Lachal, Laurent ; Auclair, Sylvain ; Lavios, Pascal ; Finet, Jean-Marc ; Assidi, Roselyne ; Klein, Mouna ; Vaudaine, Marie-Hélène ; Delaguillaumie, Fanny ; Marcoux, Carine ; Andreucci, Philippe ; Grange, Hubert ; Berthelot, Audrey ; Garcia-Santana, Roland ; Lasbordes, Franck ; Lajoinie, Emile ; Louveau, Olivier ; Chiaroni, Julien</creator><creatorcontrib>Lachal, Laurent ; Auclair, Sylvain ; Lavios, Pascal ; Finet, Jean-Marc ; Assidi, Roselyne ; Klein, Mouna ; Vaudaine, Marie-Hélène ; Delaguillaumie, Fanny ; Marcoux, Carine ; Andreucci, Philippe ; Grange, Hubert ; Berthelot, Audrey ; Garcia-Santana, Roland ; Lasbordes, Franck ; Lajoinie, Emile ; Louveau, Olivier ; Chiaroni, Julien</creatorcontrib><description>Due to the devices downscaling, the HF vapor release process, one of the most effective techniques for MEMS release, becomes more challenging regarding stiction. An initial compatibility study shows that many metals are compatible excepted Ni and Cu. Then a design of experiment (DOE) was performed on thermal oxide wafers to obtain the parameters for a free stiction process. Nevertheless, current MEMS release processes can not be used on NEMS structures due to more aggressive shape factor. The solution to adapt current HF vapor MEMS release process to NEMS consists in the reduction of the etchrate, reducing the water layer on the surface during the etch step and thereby stiction occurrence. For very challenging structures, reducing the etch rate is not sufficient to avoid stiction, heated processes have then to be used.</description><identifier>ISSN: 1938-5862</identifier><identifier>EISSN: 1938-6737</identifier><identifier>DOI: 10.1149/1.2992226</identifier><language>eng</language><ispartof>ECS transactions, 2009, Vol.16 (14), p.37-44</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,4010,27900,27901,27902</link.rule.ids></links><search><creatorcontrib>Lachal, Laurent</creatorcontrib><creatorcontrib>Auclair, Sylvain</creatorcontrib><creatorcontrib>Lavios, Pascal</creatorcontrib><creatorcontrib>Finet, Jean-Marc</creatorcontrib><creatorcontrib>Assidi, Roselyne</creatorcontrib><creatorcontrib>Klein, Mouna</creatorcontrib><creatorcontrib>Vaudaine, Marie-Hélène</creatorcontrib><creatorcontrib>Delaguillaumie, Fanny</creatorcontrib><creatorcontrib>Marcoux, Carine</creatorcontrib><creatorcontrib>Andreucci, Philippe</creatorcontrib><creatorcontrib>Grange, Hubert</creatorcontrib><creatorcontrib>Berthelot, Audrey</creatorcontrib><creatorcontrib>Garcia-Santana, Roland</creatorcontrib><creatorcontrib>Lasbordes, Franck</creatorcontrib><creatorcontrib>Lajoinie, Emile</creatorcontrib><creatorcontrib>Louveau, Olivier</creatorcontrib><creatorcontrib>Chiaroni, Julien</creatorcontrib><title>HF Vapor Release Assessment to Address NEMS Applications</title><title>ECS transactions</title><description>Due to the devices downscaling, the HF vapor release process, one of the most effective techniques for MEMS release, becomes more challenging regarding stiction. An initial compatibility study shows that many metals are compatible excepted Ni and Cu. Then a design of experiment (DOE) was performed on thermal oxide wafers to obtain the parameters for a free stiction process. Nevertheless, current MEMS release processes can not be used on NEMS structures due to more aggressive shape factor. The solution to adapt current HF vapor MEMS release process to NEMS consists in the reduction of the etchrate, reducing the water layer on the surface during the etch step and thereby stiction occurrence. For very challenging structures, reducing the etch rate is not sufficient to avoid stiction, heated processes have then to be used.</description><issn>1938-5862</issn><issn>1938-6737</issn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2009</creationdate><recordtype>conference_proceeding</recordtype><recordid>eNotj81Kw0AYRQdRsFYXvsFsXaTO_88ylNYWqoIWt8OXyQxE0ibMl41vb8Ws7r1wuHAIeeRsxbnyz3wlvBdCmCuy4F66ylhpr-eunRG35A7xmzFzwe2CuN2WfsE4FPqR-gSYaI2YEE_pPNFpoHXblsukb5vXT1qPY99FmLrhjPfkJkOP6WHOJTluN8f1rjq8v-zX9aGKnKmpcp7rbH2rMxitgLmkG2AxpcbpqJRtso9RsdxErmOWBlS0YKQ2FkDYKJfk6f82lgGxpBzG0p2g_ATOwp9x4GE2lr-fKUer</recordid><startdate>2009</startdate><enddate>2009</enddate><creator>Lachal, Laurent</creator><creator>Auclair, Sylvain</creator><creator>Lavios, Pascal</creator><creator>Finet, Jean-Marc</creator><creator>Assidi, Roselyne</creator><creator>Klein, Mouna</creator><creator>Vaudaine, Marie-Hélène</creator><creator>Delaguillaumie, Fanny</creator><creator>Marcoux, Carine</creator><creator>Andreucci, Philippe</creator><creator>Grange, Hubert</creator><creator>Berthelot, Audrey</creator><creator>Garcia-Santana, Roland</creator><creator>Lasbordes, Franck</creator><creator>Lajoinie, Emile</creator><creator>Louveau, Olivier</creator><creator>Chiaroni, Julien</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>2009</creationdate><title>HF Vapor Release Assessment to Address NEMS Applications</title><author>Lachal, Laurent ; Auclair, Sylvain ; Lavios, Pascal ; Finet, Jean-Marc ; Assidi, Roselyne ; Klein, Mouna ; Vaudaine, Marie-Hélène ; Delaguillaumie, Fanny ; Marcoux, Carine ; Andreucci, Philippe ; Grange, Hubert ; Berthelot, Audrey ; Garcia-Santana, Roland ; Lasbordes, Franck ; Lajoinie, Emile ; Louveau, Olivier ; Chiaroni, Julien</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c104t-8915f79d5fa654a08e5ba0ceeb85c447bf9cc40fbc15cf36a4c7a63567aa27c3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2009</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Lachal, Laurent</creatorcontrib><creatorcontrib>Auclair, Sylvain</creatorcontrib><creatorcontrib>Lavios, Pascal</creatorcontrib><creatorcontrib>Finet, Jean-Marc</creatorcontrib><creatorcontrib>Assidi, Roselyne</creatorcontrib><creatorcontrib>Klein, Mouna</creatorcontrib><creatorcontrib>Vaudaine, Marie-Hélène</creatorcontrib><creatorcontrib>Delaguillaumie, Fanny</creatorcontrib><creatorcontrib>Marcoux, Carine</creatorcontrib><creatorcontrib>Andreucci, Philippe</creatorcontrib><creatorcontrib>Grange, Hubert</creatorcontrib><creatorcontrib>Berthelot, Audrey</creatorcontrib><creatorcontrib>Garcia-Santana, Roland</creatorcontrib><creatorcontrib>Lasbordes, Franck</creatorcontrib><creatorcontrib>Lajoinie, Emile</creatorcontrib><creatorcontrib>Louveau, Olivier</creatorcontrib><creatorcontrib>Chiaroni, Julien</creatorcontrib><collection>CrossRef</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lachal, Laurent</au><au>Auclair, Sylvain</au><au>Lavios, Pascal</au><au>Finet, Jean-Marc</au><au>Assidi, Roselyne</au><au>Klein, Mouna</au><au>Vaudaine, Marie-Hélène</au><au>Delaguillaumie, Fanny</au><au>Marcoux, Carine</au><au>Andreucci, Philippe</au><au>Grange, Hubert</au><au>Berthelot, Audrey</au><au>Garcia-Santana, Roland</au><au>Lasbordes, Franck</au><au>Lajoinie, Emile</au><au>Louveau, Olivier</au><au>Chiaroni, Julien</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>HF Vapor Release Assessment to Address NEMS Applications</atitle><btitle>ECS transactions</btitle><date>2009</date><risdate>2009</risdate><volume>16</volume><issue>14</issue><spage>37</spage><epage>44</epage><pages>37-44</pages><issn>1938-5862</issn><eissn>1938-6737</eissn><abstract>Due to the devices downscaling, the HF vapor release process, one of the most effective techniques for MEMS release, becomes more challenging regarding stiction. An initial compatibility study shows that many metals are compatible excepted Ni and Cu. Then a design of experiment (DOE) was performed on thermal oxide wafers to obtain the parameters for a free stiction process. Nevertheless, current MEMS release processes can not be used on NEMS structures due to more aggressive shape factor. The solution to adapt current HF vapor MEMS release process to NEMS consists in the reduction of the etchrate, reducing the water layer on the surface during the etch step and thereby stiction occurrence. For very challenging structures, reducing the etch rate is not sufficient to avoid stiction, heated processes have then to be used.</abstract><doi>10.1149/1.2992226</doi><tpages>8</tpages></addata></record> |
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| identifier | ISSN: 1938-5862 |
| ispartof | ECS transactions, 2009, Vol.16 (14), p.37-44 |
| issn | 1938-5862 1938-6737 |
| language | eng |
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| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| title | HF Vapor Release Assessment to Address NEMS Applications |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-01T21%3A23%3A09IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=HF%20Vapor%20Release%20Assessment%20to%20Address%20NEMS%20Applications&rft.btitle=ECS%20transactions&rft.au=Lachal,%20Laurent&rft.date=2009&rft.volume=16&rft.issue=14&rft.spage=37&rft.epage=44&rft.pages=37-44&rft.issn=1938-5862&rft.eissn=1938-6737&rft_id=info:doi/10.1149/1.2992226&rft_dat=%3Ccrossref%3E10_1149_1_2992226%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |