Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N[sub 2] and N[sub 2]O Plasma Post-Treatments

Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N[sub 2] and N[sub 2]O Plasma Post-Treatments

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of the Electrochemical Society 2008, Vol.155 (12), p.G299
Hauptverfasser: Kim, Hyungchul, Kim, Seokhoon, Woo, Sanghyun, Chung, Hye Yeong, Kim, Honggyu, Park, Jongsan, Jeon, Hyeongtag
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue 12
container_start_page G299
container_title Journal of the Electrochemical Society
container_volume 155
creator Kim, Hyungchul
Kim, Seokhoon
Woo, Sanghyun
Chung, Hye Yeong
Kim, Honggyu
Park, Jongsan
Jeon, Hyeongtag
description
doi_str_mv 10.1149/1.2990702
format Article
fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1149_1_2990702</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1149_1_2990702</sourcerecordid><originalsourceid>FETCH-LOGICAL-c742-624224aa8cd0ad2d2a145831540b235108ef01bbb4b0ae813e4a7715cb5fcdd73</originalsourceid><addsrcrecordid>eNo9UDtPwzAY9AASpTDwD7wypPiznToZUYAWqaIVZEMo-uzYqlEeyDYD_55EVCx3Ot1jOEJugK0AZHkHK16WTDF-RhaMgcjkOocLchnj5yShkGpBxuqIAU2ywcfkTaSjo_XRD3TrsjffeYPJ0s0MD9521qQwh9BNBfpq-3EyXt7jt6b8g-LQ_os9PXQYe6SHMaasDhZTb4cUr8i5wy7a6xMvSf30WFfbbLffPFf3u8woybM1l5xLxMK0DFvecgSZFwJyyTQXObDCOgZaa6kZ2gKElagU5EbnzrStEkty-zdrwhhjsK75Cr7H8NMAa-ZzGmhO54hf77xYVw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N[sub 2] and N[sub 2]O Plasma Post-Treatments</title><source>IOP Publishing Journals</source><creator>Kim, Hyungchul ; Kim, Seokhoon ; Woo, Sanghyun ; Chung, Hye Yeong ; Kim, Honggyu ; Park, Jongsan ; Jeon, Hyeongtag</creator><creatorcontrib>Kim, Hyungchul ; Kim, Seokhoon ; Woo, Sanghyun ; Chung, Hye Yeong ; Kim, Honggyu ; Park, Jongsan ; Jeon, Hyeongtag</creatorcontrib><identifier>ISSN: 0013-4651</identifier><identifier>DOI: 10.1149/1.2990702</identifier><language>eng</language><ispartof>Journal of the Electrochemical Society, 2008, Vol.155 (12), p.G299</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c742-624224aa8cd0ad2d2a145831540b235108ef01bbb4b0ae813e4a7715cb5fcdd73</citedby><cites>FETCH-LOGICAL-c742-624224aa8cd0ad2d2a145831540b235108ef01bbb4b0ae813e4a7715cb5fcdd73</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,4024,27923,27924,27925</link.rule.ids></links><search><creatorcontrib>Kim, Hyungchul</creatorcontrib><creatorcontrib>Kim, Seokhoon</creatorcontrib><creatorcontrib>Woo, Sanghyun</creatorcontrib><creatorcontrib>Chung, Hye Yeong</creatorcontrib><creatorcontrib>Kim, Honggyu</creatorcontrib><creatorcontrib>Park, Jongsan</creatorcontrib><creatorcontrib>Jeon, Hyeongtag</creatorcontrib><title>Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N[sub 2] and N[sub 2]O Plasma Post-Treatments</title><title>Journal of the Electrochemical Society</title><issn>0013-4651</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNo9UDtPwzAY9AASpTDwD7wypPiznToZUYAWqaIVZEMo-uzYqlEeyDYD_55EVCx3Ot1jOEJugK0AZHkHK16WTDF-RhaMgcjkOocLchnj5yShkGpBxuqIAU2ywcfkTaSjo_XRD3TrsjffeYPJ0s0MD9521qQwh9BNBfpq-3EyXt7jt6b8g-LQ_os9PXQYe6SHMaasDhZTb4cUr8i5wy7a6xMvSf30WFfbbLffPFf3u8woybM1l5xLxMK0DFvecgSZFwJyyTQXObDCOgZaa6kZ2gKElagU5EbnzrStEkty-zdrwhhjsK75Cr7H8NMAa-ZzGmhO54hf77xYVw</recordid><startdate>2008</startdate><enddate>2008</enddate><creator>Kim, Hyungchul</creator><creator>Kim, Seokhoon</creator><creator>Woo, Sanghyun</creator><creator>Chung, Hye Yeong</creator><creator>Kim, Honggyu</creator><creator>Park, Jongsan</creator><creator>Jeon, Hyeongtag</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>2008</creationdate><title>Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N[sub 2] and N[sub 2]O Plasma Post-Treatments</title><author>Kim, Hyungchul ; Kim, Seokhoon ; Woo, Sanghyun ; Chung, Hye Yeong ; Kim, Honggyu ; Park, Jongsan ; Jeon, Hyeongtag</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c742-624224aa8cd0ad2d2a145831540b235108ef01bbb4b0ae813e4a7715cb5fcdd73</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kim, Hyungchul</creatorcontrib><creatorcontrib>Kim, Seokhoon</creatorcontrib><creatorcontrib>Woo, Sanghyun</creatorcontrib><creatorcontrib>Chung, Hye Yeong</creatorcontrib><creatorcontrib>Kim, Honggyu</creatorcontrib><creatorcontrib>Park, Jongsan</creatorcontrib><creatorcontrib>Jeon, Hyeongtag</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of the Electrochemical Society</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kim, Hyungchul</au><au>Kim, Seokhoon</au><au>Woo, Sanghyun</au><au>Chung, Hye Yeong</au><au>Kim, Honggyu</au><au>Park, Jongsan</au><au>Jeon, Hyeongtag</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N[sub 2] and N[sub 2]O Plasma Post-Treatments</atitle><jtitle>Journal of the Electrochemical Society</jtitle><date>2008</date><risdate>2008</risdate><volume>155</volume><issue>12</issue><spage>G299</spage><pages>G299-</pages><issn>0013-4651</issn><doi>10.1149/1.2990702</doi></addata></record>
fulltext fulltext
identifier ISSN: 0013-4651
ispartof Journal of the Electrochemical Society, 2008, Vol.155 (12), p.G299
issn 0013-4651
language eng
recordid cdi_crossref_primary_10_1149_1_2990702
source IOP Publishing Journals
title Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N[sub 2] and N[sub 2]O Plasma Post-Treatments
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-26T03%3A35%3A07IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Characteristics%20of%20Thin%20Hf-Silicate%20Gate%20Dielectrics%20after%20Remote%20N%5Bsub%202%5D%20and%20N%5Bsub%202%5DO%20Plasma%20Post-Treatments&rft.jtitle=Journal%20of%20the%20Electrochemical%20Society&rft.au=Kim,%20Hyungchul&rft.date=2008&rft.volume=155&rft.issue=12&rft.spage=G299&rft.pages=G299-&rft.issn=0013-4651&rft_id=info:doi/10.1149/1.2990702&rft_dat=%3Ccrossref%3E10_1149_1_2990702%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true