Creating Thin-Film Silicon on Flexible Substrates using Adhesive Bonding and Wet Etching

A 4" silicon-on-insulator wafer was bonded to a flexible plastic substrate using indirect bonding to fabricate thin-film silicon on a flexible substrate. The bonded materials were annealed at 150oC for 48 hours. The bonding process created stress in the silicon (~20 MPa) at the interface due to...

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Veröffentlicht in:	ECS transactions 2008-10, Vol.16 (8), p.287-294
Hauptverfasser:	Song, Shin-Da, Holl, Susan L., Colinge, Cynthia, Byun, Ki Y., Hobart, K. D., Kub, Fritz
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Sprache:	eng
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description	A 4" silicon-on-insulator wafer was bonded to a flexible plastic substrate using indirect bonding to fabricate thin-film silicon on a flexible substrate. The bonded materials were annealed at 150oC for 48 hours. The bonding process created stress in the silicon (~20 MPa) at the interface due to thermal mismatch. Thin-film silicon was created by removing substrate material. The interfacial stress increased as the silicon was thinned. Relaxation of the stress resulted in residual defects in the silicon.
doi_str_mv	10.1149/1.2982880
format	Article
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source	IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
title	Creating Thin-Film Silicon on Flexible Substrates using Adhesive Bonding and Wet Etching
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