Characteristics of Titanium Oxide Gate Nmosfet Formed by E-Beam Evaporation with Additional Rapid Thermal Oxidation and Annealing

High k insulators, such as titanium oxide, have been obtained by Ti e-beam evaporation, using different thicknesses of 5nm, 10nm and 20nm with additional rapid thermal oxidation and annealing at temperature of 960{degree sign}C for 40s. Characterization by Fourier transform infrared analyses reveals...

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Bibliographische Detailangaben

Hauptverfasser:	Barros, Angélica D., Miyoshi, Juliana, Wada, Ricardo, Cavarsan, F. A., Doi, Ioshiaki, Diniz, José A.
Format:	Tagungsbericht
Sprache:	eng
Online-Zugang:	Volltext
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