Process Characteristics and Physical Properties of MO-ALD ZrO2 Thin Films Deposited in a 300 mm Deposition System

This work presents a detailed investigation of the deposition of ZrO2 using a metallorganic precursor in a 300 mm wafer processing ALD system. The ZrO2 films in this study were characterized by inline spectroscopic ellipsometry and corona-oxide-semiconductor measurements, and offline Auger electron...

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Bibliographische Detailangaben

Hauptverfasser:	Consiglio, Steven, Clark, Robert D., Wajda, Cory S., Igeta, Masanobu, Leusink, Gert J., Sugawara, Takuya, Nakabayashi, Hajime
Format:	Tagungsbericht
Sprache:	eng
Online-Zugang:	Volltext
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