Growth of Fluoride Quantum Well Heterostrucutres for Resonant Tunneling Devices on Si Substrates

Heteroepitaxial fluoride structures are candidates of material systems for quantum well devices such as resonant tunneling devices on Si substrates. Resonant tunneling diodes composed of CaF2/CdF2/CaF2 on Si(111) have been demonstrated and they exhibited large potential for high performance quantum...

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Veröffentlicht in:	ECS transactions 2008-05, Vol.13 (2), p.253-262
Hauptverfasser:	Tsutsui, Kazuo, Oshita, Takao, Watanabe, So, Maeda, Motoki
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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