Homoepitaxial Growth of Semi-Insulating 4H-SiC by Metal-Organic Precursors
The authors attempted to grow a semi-insulating silicon carbide (SiC) epitaxial layer by in situ doping using metal-organic precursors. The homoepitaxial growth of the 4H-SiC layer was performed by MOCVD using the organo-silicon precursor, bis-trimethylsilylmethane (BTMSM, [C7H20Si2]). In situ dopin...
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