Advanced Metrologies for Wafer Contamination and Nanolayer Characterization Using XRF Methods

Advanced Metrologies for Wafer Contamination and Nanolayer Characterization Using XRF Methods

X-ray fluorescence (XRF) analytical methods based on synchrotron radiation can effectively contribute to the characterization of both semiconductor surface contamination and nanolayered systems. Total-reflection XRF allows for contamination analysis, reference-free XRF for the determination of nanol...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Beckhoff, Burkhard, Fliegauf, Rolf, Hönicke, Philipp, Kolbe, Michael, Müller, Matthias, Pollakowski, Beatrix, Weser, Jan, Ulm, Gerhard
Format: Tagungsbericht
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 279
container_issue 3
container_start_page 273
container_title
container_volume 11
creator Beckhoff, Burkhard
Fliegauf, Rolf
Hönicke, Philipp
Kolbe, Michael
Müller, Matthias
Pollakowski, Beatrix
Weser, Jan
Ulm, Gerhard
description X-ray fluorescence (XRF) analytical methods based on synchrotron radiation can effectively contribute to the characterization of both semiconductor surface contamination and nanolayered systems. Total-reflection XRF allows for contamination analysis, reference-free XRF for the determination of nanolayer thicknesses and composition, and grazing-incidence XRF for elemental depth profiling of nanolayered systems. Due to the tunability of synchrotron radiation, each of these XRF methods can be easily combined with NEXAFS investigation to determine the species of contamination as well as nanolayer constituents.
doi_str_mv 10.1149/1.2778670
format Conference Proceeding
fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1149_1_2778670</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1149_1_2778670</sourcerecordid><originalsourceid>FETCH-LOGICAL-c144t-8d0d6f3e9d88b7900c0dbc8be284286d415ad633b1a7081f126d47b5cf438f73</originalsourceid><addsrcrecordid>eNotkE1LAzEYhIMoWKsH_0GuHrYmm2ySPZZirVAVpKIXWd7NRxvZJpIsQv31dumeZphnmMMgdEvJjFJe39NZKaUSkpyhCa2ZKoRk8nz0lRLlJbrK-ZsQcazLCfqam18I2hr8bPsUu7j1NmMXE_4AZxNexNDD3gfofQwYgsEvEGIHh4HtIIHubfJ_J_yefdjiz7flMLaLJl-jCwddtjejTtFm-bBZrIr16-PTYr4uNOW8L5QhRjhma6NUK2tCNDGtVq0tFS-VMJxWYARjLQVJFHW0PGayrbTjTDnJpujuNKtTzDlZ1_wkv4d0aChphlsa2oy3sH-NQ1Vx</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Advanced Metrologies for Wafer Contamination and Nanolayer Characterization Using XRF Methods</title><source>Institute of Physics Journals</source><creator>Beckhoff, Burkhard ; Fliegauf, Rolf ; Hönicke, Philipp ; Kolbe, Michael ; Müller, Matthias ; Pollakowski, Beatrix ; Weser, Jan ; Ulm, Gerhard</creator><creatorcontrib>Beckhoff, Burkhard ; Fliegauf, Rolf ; Hönicke, Philipp ; Kolbe, Michael ; Müller, Matthias ; Pollakowski, Beatrix ; Weser, Jan ; Ulm, Gerhard</creatorcontrib><description>X-ray fluorescence (XRF) analytical methods based on synchrotron radiation can effectively contribute to the characterization of both semiconductor surface contamination and nanolayered systems. Total-reflection XRF allows for contamination analysis, reference-free XRF for the determination of nanolayer thicknesses and composition, and grazing-incidence XRF for elemental depth profiling of nanolayered systems. Due to the tunability of synchrotron radiation, each of these XRF methods can be easily combined with NEXAFS investigation to determine the species of contamination as well as nanolayer constituents.</description><identifier>ISSN: 1938-5862</identifier><identifier>EISSN: 1938-6737</identifier><identifier>DOI: 10.1149/1.2778670</identifier><language>eng</language><ispartof>ECS transactions, 2007, Vol.11 (3), p.273-279</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c144t-8d0d6f3e9d88b7900c0dbc8be284286d415ad633b1a7081f126d47b5cf438f73</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Beckhoff, Burkhard</creatorcontrib><creatorcontrib>Fliegauf, Rolf</creatorcontrib><creatorcontrib>Hönicke, Philipp</creatorcontrib><creatorcontrib>Kolbe, Michael</creatorcontrib><creatorcontrib>Müller, Matthias</creatorcontrib><creatorcontrib>Pollakowski, Beatrix</creatorcontrib><creatorcontrib>Weser, Jan</creatorcontrib><creatorcontrib>Ulm, Gerhard</creatorcontrib><title>Advanced Metrologies for Wafer Contamination and Nanolayer Characterization Using XRF Methods</title><title>ECS transactions</title><description>X-ray fluorescence (XRF) analytical methods based on synchrotron radiation can effectively contribute to the characterization of both semiconductor surface contamination and nanolayered systems. Total-reflection XRF allows for contamination analysis, reference-free XRF for the determination of nanolayer thicknesses and composition, and grazing-incidence XRF for elemental depth profiling of nanolayered systems. Due to the tunability of synchrotron radiation, each of these XRF methods can be easily combined with NEXAFS investigation to determine the species of contamination as well as nanolayer constituents.</description><issn>1938-5862</issn><issn>1938-6737</issn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2007</creationdate><recordtype>conference_proceeding</recordtype><recordid>eNotkE1LAzEYhIMoWKsH_0GuHrYmm2ySPZZirVAVpKIXWd7NRxvZJpIsQv31dumeZphnmMMgdEvJjFJe39NZKaUSkpyhCa2ZKoRk8nz0lRLlJbrK-ZsQcazLCfqam18I2hr8bPsUu7j1NmMXE_4AZxNexNDD3gfofQwYgsEvEGIHh4HtIIHubfJ_J_yefdjiz7flMLaLJl-jCwddtjejTtFm-bBZrIr16-PTYr4uNOW8L5QhRjhma6NUK2tCNDGtVq0tFS-VMJxWYARjLQVJFHW0PGayrbTjTDnJpujuNKtTzDlZ1_wkv4d0aChphlsa2oy3sH-NQ1Vx</recordid><startdate>20070928</startdate><enddate>20070928</enddate><creator>Beckhoff, Burkhard</creator><creator>Fliegauf, Rolf</creator><creator>Hönicke, Philipp</creator><creator>Kolbe, Michael</creator><creator>Müller, Matthias</creator><creator>Pollakowski, Beatrix</creator><creator>Weser, Jan</creator><creator>Ulm, Gerhard</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20070928</creationdate><title>Advanced Metrologies for Wafer Contamination and Nanolayer Characterization Using XRF Methods</title><author>Beckhoff, Burkhard ; Fliegauf, Rolf ; Hönicke, Philipp ; Kolbe, Michael ; Müller, Matthias ; Pollakowski, Beatrix ; Weser, Jan ; Ulm, Gerhard</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c144t-8d0d6f3e9d88b7900c0dbc8be284286d415ad633b1a7081f126d47b5cf438f73</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2007</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Beckhoff, Burkhard</creatorcontrib><creatorcontrib>Fliegauf, Rolf</creatorcontrib><creatorcontrib>Hönicke, Philipp</creatorcontrib><creatorcontrib>Kolbe, Michael</creatorcontrib><creatorcontrib>Müller, Matthias</creatorcontrib><creatorcontrib>Pollakowski, Beatrix</creatorcontrib><creatorcontrib>Weser, Jan</creatorcontrib><creatorcontrib>Ulm, Gerhard</creatorcontrib><collection>CrossRef</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Beckhoff, Burkhard</au><au>Fliegauf, Rolf</au><au>Hönicke, Philipp</au><au>Kolbe, Michael</au><au>Müller, Matthias</au><au>Pollakowski, Beatrix</au><au>Weser, Jan</au><au>Ulm, Gerhard</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Advanced Metrologies for Wafer Contamination and Nanolayer Characterization Using XRF Methods</atitle><btitle>ECS transactions</btitle><date>2007-09-28</date><risdate>2007</risdate><volume>11</volume><issue>3</issue><spage>273</spage><epage>279</epage><pages>273-279</pages><issn>1938-5862</issn><eissn>1938-6737</eissn><abstract>X-ray fluorescence (XRF) analytical methods based on synchrotron radiation can effectively contribute to the characterization of both semiconductor surface contamination and nanolayered systems. Total-reflection XRF allows for contamination analysis, reference-free XRF for the determination of nanolayer thicknesses and composition, and grazing-incidence XRF for elemental depth profiling of nanolayered systems. Due to the tunability of synchrotron radiation, each of these XRF methods can be easily combined with NEXAFS investigation to determine the species of contamination as well as nanolayer constituents.</abstract><doi>10.1149/1.2778670</doi><tpages>7</tpages></addata></record>
fulltext fulltext
identifier ISSN: 1938-5862
ispartof ECS transactions, 2007, Vol.11 (3), p.273-279
issn 1938-5862
1938-6737
language eng
recordid cdi_crossref_primary_10_1149_1_2778670
source Institute of Physics Journals
title Advanced Metrologies for Wafer Contamination and Nanolayer Characterization Using XRF Methods
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-07T16%3A13%3A27IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Advanced%20Metrologies%20for%20Wafer%20Contamination%20and%20Nanolayer%20Characterization%20Using%20XRF%20Methods&rft.btitle=ECS%20transactions&rft.au=Beckhoff,%20Burkhard&rft.date=2007-09-28&rft.volume=11&rft.issue=3&rft.spage=273&rft.epage=279&rft.pages=273-279&rft.issn=1938-5862&rft.eissn=1938-6737&rft_id=info:doi/10.1149/1.2778670&rft_dat=%3Ccrossref%3E10_1149_1_2778670%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true