Formation of Silicided Hyper-Shallow p+/n- Junctions by Pulsed Laser Annealing

In this invited talk, we first review various methods for the formation of p+/n junctions of depth of less than 40nm using excimer pulsed laser annealing technique of 248nm wavelength. The characteristics of junctions formed using single and multiple-pulsed shallow melt and non-melt laser annealing...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Pey, Kin L., Ong, K. K., Lee, P. S., Setiawan, Y., Wang, X.C., Wee, A.T.S., Lim, G.C.
Format:	Tagungsbericht
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!