Fabrication and Power-Management Demonstration of Four-Terminal FinFETs

A high-aspect-ratio and damage-free vertical ultrathin channel (UTC) for a vertical-type double-gate (DG) MOSFET has been fabricated by using low-energy neutral-beam (NBE) etching. Also, dynamically power-controllable CMOS technology has been investigated using separated-gate four-terminal (4T) FinF...

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Bibliographische Detailangaben

Hauptverfasser:	Endo, Kazuhiko, Liu, Yongxum, Masahara, Meishoku, Matsukawa, Takashi, O'uchi, Shin'Ichi, Suzuki, Eiichi
Format:	Tagungsbericht
Sprache:	eng
Online-Zugang:	Volltext
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