Fabrication of InP/SiO2/Si Substrate using Ion-Cutting Process and Selective Chemical Etching

In this study, an InP layer was transferred onto a Si substrate coated with a thermal oxide, through a process combining ion-cutting process and selective chemical etching. Compared with conventional ion-cutting of bulk InP wafers, this layer transfer scheme not only takes advantage of ion- cutting...

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Bibliographische Detailangaben

Hauptverfasser:	Chen, Peng, Xu, Dapeng, Mawst, Luke, Henttinen, Kimmo, Suni, Tommi, Suni, Ilkka, Kuech, T.F., Lau, S. S.
Format:	Tagungsbericht
Sprache:	eng
Online-Zugang:	Volltext
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