Selection of Germanium Transistor Parameters by Control of Moisture at Low Levels within the Device Encapsulation

Selection of Germanium Transistor Parameters by Control of Moisture at Low Levels within the Device Encapsulation

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Veröffentlicht in:Journal of the Electrochemical Society 1962, Vol.109 (7), p.589
Hauptverfasser: Gnaedinger, Robert J., Flaschen, Steward S., Hall, Marie A., Richez, Edward J.
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Sprache:eng
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container_end_page
container_issue 7
container_start_page 589
container_title Journal of the Electrochemical Society
container_volume 109
creator Gnaedinger, Robert J.
Flaschen, Steward S.
Hall, Marie A.
Richez, Edward J.
description
doi_str_mv 10.1149/1.2425502
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title Selection of Germanium Transistor Parameters by Control of Moisture at Low Levels within the Device Encapsulation
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