Influence of Substrate Temperature on GaAs Epitaxial Deposition Rates
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| Veröffentlicht in: | Journal of the Electrochemical Society 1968, Vol.115 (4), p.405 |
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| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| container_issue | 4 |
| container_start_page | 405 |
| container_title | Journal of the Electrochemical Society |
| container_volume | 115 |
| creator | Shaw, Don W. |
| description | |
| doi_str_mv | 10.1149/1.2411231 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 0013-4651 |
| ispartof | Journal of the Electrochemical Society, 1968, Vol.115 (4), p.405 |
| issn | 0013-4651 |
| language | eng |
| recordid | cdi_crossref_primary_10_1149_1_2411231 |
| source | Institute of Physics Journals |
| title | Influence of Substrate Temperature on GaAs Epitaxial Deposition Rates |
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