Plane Defect at the Interface and Dislocations in Epitaxially Grown GaAs
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| Veröffentlicht in: | Journal of the Electrochemical Society 1972, Vol.119 (8), p.1113 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| container_issue | 8 |
| container_start_page | 1113 |
| container_title | Journal of the Electrochemical Society |
| container_volume | 119 |
| creator | Kishino, Seigo^ Iida, Shinya |
| description | |
| doi_str_mv | 10.1149/1.2404409 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 0013-4651 |
| ispartof | Journal of the Electrochemical Society, 1972, Vol.119 (8), p.1113 |
| issn | 0013-4651 |
| language | eng |
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| source | IOP Publishing Journals |
| title | Plane Defect at the Interface and Dislocations in Epitaxially Grown GaAs |
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