Surface Study of P-Type MBE Gallium Nitride Growth over CdSe Quantum Dots

The objective of our current work is to observe the effects of MBE p-GaN growth over II-VI semiconductor nanocrystals on an MOCVD n-GaN template. The starting material was approximately 2 microns of n-type GaN MOCVD material atop a sapphire wafer. CdSe quantum dots were applied through drop and spin...

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Bibliographische Detailangaben

Hauptverfasser:	Burkhart, Casey C., Patel, Kinnari N., Pagan, Jennifer G. G., Barletta, Phillip, Stokes, E. B.
Format:	Tagungsbericht
Sprache:	eng
Online-Zugang:	Volltext
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