Oxide Dielectrics for Reliable Passivation of AlGaN/GaN HEMTs and Insulated Gates

Dielectric oxides of scandium and magnesium have been employed as a surface passivation on AlGaN/GaN HEMT devices. Research to discover a lower lattice mismatch oxide to further reduce the interface trap density and increase oxide/nitride stability has lead to adding calcium to the MgO to create a c...

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Bibliographische Detailangaben

Hauptverfasser:	Gila, Brent, Hlad, Mark, Anderson, Travis, Chen, Jau-Jiun, Allums, Kimberly, Gerger, Andrew, Herrero, Andrew, Jang, Soohwan, Kang, B.S., Abernathy, Cammy R., Ren, F., Pearton, Steve J.
Format:	Tagungsbericht
Sprache:	eng
Online-Zugang:	Volltext
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