Thin Film Transfer for the Fabrication of Multiple Gate MOS Transistors

Thin Film Transfer for the Fabrication of Multiple Gate MOS Transistors

A new approach in double gate devices processing based on the wafer bonding of a thin SOI film on pre-etched cavities is presented. In this context, wafer bonding parameters are analyzed. The effects of surface activation and annealing conditions are qualified, quantified and a viable solution is pr...

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Hauptverfasser: Olbrechts, Benoit, Södervall, Ulf, Bengtsson, S., Raskin, Jean-Pierre
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creator Olbrechts, Benoit
Södervall, Ulf
Bengtsson, S.
Raskin, Jean-Pierre
description A new approach in double gate devices processing based on the wafer bonding of a thin SOI film on pre-etched cavities is presented. In this context, wafer bonding parameters are analyzed. The effects of surface activation and annealing conditions are qualified, quantified and a viable solution is proposed.
doi_str_mv 10.1149/1.2357053
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ispartof ECS transactions, 2006, Vol.3 (6), p.47-58
issn 1938-5862
1938-6737
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source Institute of Physics Journals
title Thin Film Transfer for the Fabrication of Multiple Gate MOS Transistors
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