Stimulated THz Emission of Strained p-Ge and SiGe/Si Quantum-Well Structures Doped with Shallow Acceptors

Stimulated THz Emission of Strained p-Ge and SiGe/Si Quantum-Well Structures Doped with Shallow Acceptors

The origin and properties of stimulated terahertz (THz) emission in uniaxially compressed p-Ge and strained SiGe/Si quantum-well structures doped with shallow acceptors are discussed. The THz emission is associated with the stimulated optical transitions between resonant and localized acceptor state...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Kagan, Miron S., Altukhov, Igor, Sinis, Valeriy, Chirkova, Elena, Paprotskiy, Stanislav, Yassievich, Irina, Odnoblyudov, Maksim, Prokofiev, Aleksey, Kolodzey, James
Format: Tagungsbericht
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 757
container_issue 7
container_start_page 745
container_title
container_volume 3
creator Kagan, Miron S.
Altukhov, Igor
Sinis, Valeriy
Chirkova, Elena
Paprotskiy, Stanislav
Yassievich, Irina
Odnoblyudov, Maksim
Prokofiev, Aleksey
Kolodzey, James
description The origin and properties of stimulated terahertz (THz) emission in uniaxially compressed p-Ge and strained SiGe/Si quantum-well structures doped with shallow acceptors are discussed. The THz emission is associated with the stimulated optical transitions between resonant and localized acceptor states. Spectra of the emission are presented. The regimes of emission excitation and possibility of cw operation are examined.
doi_str_mv 10.1149/1.2355869
format Conference Proceeding
fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1149_1_2355869</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1149_1_2355869</sourcerecordid><originalsourceid>FETCH-LOGICAL-c144t-3dc27e60282dde4918761fdb20b6231d28437d2834c40354cdc1a30541bed9453</originalsourceid><addsrcrecordid>eNotkF1LwzAUhoMoOKcX_oPcetEtJ0mb9nLM2QkDkU68LGmSski_SFKG_vp12JtzDu_7cC4ehJ6BrAB4toYVZXGcJtkNWkDG0igRTNzO95TTe_Tg_Q8hyYSLBbJFsO3YyGA0Pu7_8K613tu-w32Ni-Ck7aZiiHKDZadxYXOzLiz-HGUXxjb6Nk1zxUYVRmc8fu2HCT_bcMLFSTZNf8YbpcwQeucf0V0tG2-e5r1EX2-743YfHT7y9-3mECngPERMKypMQmhKtTY8g1QkUOuKkiqhDDRNORPTZFxxwmKutALJSMyhMjrjMVuil_-_yvXeO1OXg7OtdL8lkPLqqIRydsQukWJYdA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Stimulated THz Emission of Strained p-Ge and SiGe/Si Quantum-Well Structures Doped with Shallow Acceptors</title><source>Institute of Physics Journals</source><creator>Kagan, Miron S. ; Altukhov, Igor ; Sinis, Valeriy ; Chirkova, Elena ; Paprotskiy, Stanislav ; Yassievich, Irina ; Odnoblyudov, Maksim ; Prokofiev, Aleksey ; Kolodzey, James</creator><creatorcontrib>Kagan, Miron S. ; Altukhov, Igor ; Sinis, Valeriy ; Chirkova, Elena ; Paprotskiy, Stanislav ; Yassievich, Irina ; Odnoblyudov, Maksim ; Prokofiev, Aleksey ; Kolodzey, James</creatorcontrib><description>The origin and properties of stimulated terahertz (THz) emission in uniaxially compressed p-Ge and strained SiGe/Si quantum-well structures doped with shallow acceptors are discussed. The THz emission is associated with the stimulated optical transitions between resonant and localized acceptor states. Spectra of the emission are presented. The regimes of emission excitation and possibility of cw operation are examined.</description><identifier>ISSN: 1938-5862</identifier><identifier>EISSN: 1938-6737</identifier><identifier>DOI: 10.1149/1.2355869</identifier><language>eng</language><ispartof>ECS transactions, 2006, Vol.3 (7), p.745-757</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c144t-3dc27e60282dde4918761fdb20b6231d28437d2834c40354cdc1a30541bed9453</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27903,27904</link.rule.ids></links><search><creatorcontrib>Kagan, Miron S.</creatorcontrib><creatorcontrib>Altukhov, Igor</creatorcontrib><creatorcontrib>Sinis, Valeriy</creatorcontrib><creatorcontrib>Chirkova, Elena</creatorcontrib><creatorcontrib>Paprotskiy, Stanislav</creatorcontrib><creatorcontrib>Yassievich, Irina</creatorcontrib><creatorcontrib>Odnoblyudov, Maksim</creatorcontrib><creatorcontrib>Prokofiev, Aleksey</creatorcontrib><creatorcontrib>Kolodzey, James</creatorcontrib><title>Stimulated THz Emission of Strained p-Ge and SiGe/Si Quantum-Well Structures Doped with Shallow Acceptors</title><title>ECS transactions</title><description>The origin and properties of stimulated terahertz (THz) emission in uniaxially compressed p-Ge and strained SiGe/Si quantum-well structures doped with shallow acceptors are discussed. The THz emission is associated with the stimulated optical transitions between resonant and localized acceptor states. Spectra of the emission are presented. The regimes of emission excitation and possibility of cw operation are examined.</description><issn>1938-5862</issn><issn>1938-6737</issn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2006</creationdate><recordtype>conference_proceeding</recordtype><recordid>eNotkF1LwzAUhoMoOKcX_oPcetEtJ0mb9nLM2QkDkU68LGmSski_SFKG_vp12JtzDu_7cC4ehJ6BrAB4toYVZXGcJtkNWkDG0igRTNzO95TTe_Tg_Q8hyYSLBbJFsO3YyGA0Pu7_8K613tu-w32Ni-Ck7aZiiHKDZadxYXOzLiz-HGUXxjb6Nk1zxUYVRmc8fu2HCT_bcMLFSTZNf8YbpcwQeucf0V0tG2-e5r1EX2-743YfHT7y9-3mECngPERMKypMQmhKtTY8g1QkUOuKkiqhDDRNORPTZFxxwmKutALJSMyhMjrjMVuil_-_yvXeO1OXg7OtdL8lkPLqqIRydsQukWJYdA</recordid><startdate>20061020</startdate><enddate>20061020</enddate><creator>Kagan, Miron S.</creator><creator>Altukhov, Igor</creator><creator>Sinis, Valeriy</creator><creator>Chirkova, Elena</creator><creator>Paprotskiy, Stanislav</creator><creator>Yassievich, Irina</creator><creator>Odnoblyudov, Maksim</creator><creator>Prokofiev, Aleksey</creator><creator>Kolodzey, James</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20061020</creationdate><title>Stimulated THz Emission of Strained p-Ge and SiGe/Si Quantum-Well Structures Doped with Shallow Acceptors</title><author>Kagan, Miron S. ; Altukhov, Igor ; Sinis, Valeriy ; Chirkova, Elena ; Paprotskiy, Stanislav ; Yassievich, Irina ; Odnoblyudov, Maksim ; Prokofiev, Aleksey ; Kolodzey, James</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c144t-3dc27e60282dde4918761fdb20b6231d28437d2834c40354cdc1a30541bed9453</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2006</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Kagan, Miron S.</creatorcontrib><creatorcontrib>Altukhov, Igor</creatorcontrib><creatorcontrib>Sinis, Valeriy</creatorcontrib><creatorcontrib>Chirkova, Elena</creatorcontrib><creatorcontrib>Paprotskiy, Stanislav</creatorcontrib><creatorcontrib>Yassievich, Irina</creatorcontrib><creatorcontrib>Odnoblyudov, Maksim</creatorcontrib><creatorcontrib>Prokofiev, Aleksey</creatorcontrib><creatorcontrib>Kolodzey, James</creatorcontrib><collection>CrossRef</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kagan, Miron S.</au><au>Altukhov, Igor</au><au>Sinis, Valeriy</au><au>Chirkova, Elena</au><au>Paprotskiy, Stanislav</au><au>Yassievich, Irina</au><au>Odnoblyudov, Maksim</au><au>Prokofiev, Aleksey</au><au>Kolodzey, James</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Stimulated THz Emission of Strained p-Ge and SiGe/Si Quantum-Well Structures Doped with Shallow Acceptors</atitle><btitle>ECS transactions</btitle><date>2006-10-20</date><risdate>2006</risdate><volume>3</volume><issue>7</issue><spage>745</spage><epage>757</epage><pages>745-757</pages><issn>1938-5862</issn><eissn>1938-6737</eissn><abstract>The origin and properties of stimulated terahertz (THz) emission in uniaxially compressed p-Ge and strained SiGe/Si quantum-well structures doped with shallow acceptors are discussed. The THz emission is associated with the stimulated optical transitions between resonant and localized acceptor states. Spectra of the emission are presented. The regimes of emission excitation and possibility of cw operation are examined.</abstract><doi>10.1149/1.2355869</doi><tpages>13</tpages></addata></record>
fulltext fulltext
identifier ISSN: 1938-5862
ispartof ECS transactions, 2006, Vol.3 (7), p.745-757
issn 1938-5862
1938-6737
language eng
recordid cdi_crossref_primary_10_1149_1_2355869
source Institute of Physics Journals
title Stimulated THz Emission of Strained p-Ge and SiGe/Si Quantum-Well Structures Doped with Shallow Acceptors
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-27T21%3A13%3A27IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Stimulated%20THz%20Emission%20of%20Strained%20p-Ge%20and%20SiGe/Si%20Quantum-Well%20Structures%20Doped%20with%20Shallow%20Acceptors&rft.btitle=ECS%20transactions&rft.au=Kagan,%20Miron%20S.&rft.date=2006-10-20&rft.volume=3&rft.issue=7&rft.spage=745&rft.epage=757&rft.pages=745-757&rft.issn=1938-5862&rft.eissn=1938-6737&rft_id=info:doi/10.1149/1.2355869&rft_dat=%3Ccrossref%3E10_1149_1_2355869%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true