Application of Selective Si:C Epitaxy For Recessed Source/Drain Technology

Application of Selective Si:C Epitaxy For Recessed Source/Drain Technology

We have developed selective Si:C epitaxy process with 1 % substitutional carbon concentration to fill 60 nm deep recessed areas with 100 % selectivity. The process does not show loading effects of thickness and substitutional carbon concentration on patterned wafer. Different growth behavior on side...

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Hauptverfasser: Kim, Yihwan, Ye, Zhiyuan, Zojaji, Ali, Lam, Andrew, Sanchez, Errol, Kuppurao, Satheesh
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creator Kim, Yihwan
Ye, Zhiyuan
Zojaji, Ali
Lam, Andrew
Sanchez, Errol
Kuppurao, Satheesh
description We have developed selective Si:C epitaxy process with 1 % substitutional carbon concentration to fill 60 nm deep recessed areas with 100 % selectivity. The process does not show loading effects of thickness and substitutional carbon concentration on patterned wafer. Different growth behavior on sidewall of the recessed area is observed compared to that on the recessed bottom, that causes a non-flat film surface profile.
doi_str_mv 10.1149/1.2355844
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identifier ISSN: 1938-5862
ispartof ECS transactions, 2006, Vol.3 (7), p.467-471
issn 1938-5862
1938-6737
language eng
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source IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
title Application of Selective Si:C Epitaxy For Recessed Source/Drain Technology
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