Advanced Metal Gate Electrode Options Compatible with ALD and AVD® HfSiOx-Based Gate Dielectrics
We have investigated metal gate electrodes for use with high k HfSiOx gate dielectric films using AVD® and ALD technology. First, we report on the characterization of the AVD® and ALD deposition techniques where both HfO2 and SiO2 are combined for the formation of HfSiOx. Nitrogen is then incorporat...
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| creator | Karim, Zia Biossiere, Olivier Lohe, Christoph Zhang, Zhihong Park, Woong Manke, Christian Baumann, Peter K. Dalton, Jeremie Ramanathan, Sasangan Lindner, Johannes Seidel, Tom Lehnen, Peer |
| description | We have investigated metal gate electrodes for use with high k HfSiOx gate dielectric films using AVD® and ALD technology. First, we report on the characterization of the AVD® and ALD deposition techniques where both HfO2 and SiO2 are combined for the formation of HfSiOx. Nitrogen is then incorporated using both in-situ and ex-situ methods to form HfSiON and the resulting film properties are compared. Using an AVD process a work-function of >4.7eV for Ru and RuO2 gate electrode metals in combination with HfSiOx was obtained. A TaN-based metal gate was also characterized to target a promising pMOS solution using different compositions. Together with its high flexibility and composition control, both ALD and AVD® can become key processes for advanced high-k dielectrics as well as compatible CMOS metal electrodes. |
| doi_str_mv | 10.1149/1.2355727 |
| format | Conference Proceeding |
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| identifier | ISSN: 1938-5862 |
| ispartof | ECS transactions, 2006, Vol.3 (3), p.363-374 |
| issn | 1938-5862 1938-6737 |
| language | eng |
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| source | Institute of Physics Journals |
| title | Advanced Metal Gate Electrode Options Compatible with ALD and AVD® HfSiOx-Based Gate Dielectrics |
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