$Electron microscopy and X-ray diffraction determinations of strain release in InGaAs/GaAs superlattices grown by molecular beam epitaxy$

Electron microscopy and X-ray diffraction determinations of strain release in InGaAs/GaAs superlattices grown by molecular beam epitaxy

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Bibliographische Detailangaben
Veröffentlicht in:	Journal of the Electrochemical Society 1993-08, Vol.140 (8), p.2422-2427
Hauptverfasser:	SALVIATI, G, FERRARI, C, LAZZARINI, L, NASI, L, NORMAN, C. E, BRUNI, M. R, SIMEONE, M. G, MARTELLI, F
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Defects and impurities in crystals microstructure Electron, ion, and scanning probe microscopy Exact sciences and technology Linear defects: dislocations, disclinations Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties Physics Structure of solids and liquids crystallography Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Transmission, reflection and scanning electron microscopy(including ebic)
Online-Zugang:	Volltext
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