Wet Etch Characteristics of Hafnium Silicate Layers

To facilitate selective removal of the gate dielectric towards the gate electrode, wet etch characteristics of HfSiOx and HfSiOx(N) in acidified HF solutions were determined as function of several process parameters. Etch behavior of Hf- silicates was found to be little influenced by the various CVD...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Claes, Martine, Paraschiv, Vasile, Dictus, Dries, Conard, Thierry, Boullart, Werner, Vanhaelemeersch, Serge, De Gendt, Stefan, Delabie, Annelies, Van Elshocht, Sven, Zhao, Chao, Everaert, Jean-Luc
Format:	Tagungsbericht
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!